| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STU10P6F6 | P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description These devices are P-channel Power MOSFETs developed using the STripFET™ F6 technology, with a new trench gate structure. | STMICROELECTRONICS 意法半导体 |   | |
STU10P6F6 | P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications | STMICROELECTRONICS 意法半导体 | | |
STU10P6F6 | P-channel -60 V, 0.13 Ohm typ., -10 A STripFET F6 Power MOSFET in IPAK package | STMICROELECTRONICS 意法半导体 | | |
P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications | STMICROELECTRONICS 意法半导体 | | ||
P-channel 60 V, 0.15 廓 typ., 10 A STripFET??VI DeepGATE??Power MOSFET in DPAK and TO-220 packages Description These devices are P-channel Power MOSFETs developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages. Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Lo | STMICROELECTRONICS 意法半导体 | | ||
P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications | STMICROELECTRONICS 意法半导体 | | ||
P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description These devices are P-channel Power MOSFETs developed using the STripFET™ F6 technology, with a new trench gate structure. | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 60 V(D-S) MOSFET 文件：1.09165 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
TO-251 |
8000 |
只做原装现货 |
|||
ST/意法 |
23+ |
TO-251 |
50000 |
全新原装正品现货,支持订货 |
|||
ST |
22+ |
TO2513 Short Leads IPak TO251A |
9000 |
原厂渠道,现货配单 |
|||
ST原装 |
24+ |
TO-251 |
30980 |
原装现货/放心购买 |
|||
ST/意法 |
22+ |
N |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
ST |
22+ |
TO251 |
20000 |
公司只做原装 品质保障 |
|||
ST/意法 |
22+ |
TO251 |
6000 |
原装 |
|||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ST |
TO-251 |
22+ |
50000 |
原装正品现货 支持BOM配单! |
|||
ST/意法 |
24+ |
NA/ |
50000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
STU10P6F6规格书下载地址
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DdatasheetPDF页码索引
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