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STP10P6F6价格
参考价格：￥2.1201
型号：STP10P6F6 品牌：STMicroelectronics 备注：这里有STP10P6F6多少钱，2025年最近7天走势，今日出价，今日竞价，STP10P6F6批发/采购报价，STP10P6F6行情走势销售排行榜，STP10P6F6报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STP10P6F6 | P-channel 60 V, 0.15 廓 typ., 10 A STripFET??VI DeepGATE??Power MOSFET in DPAK and TO-220 packages Description These devices are P-channel Power MOSFETs developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages. Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Lo | STMICROELECTRONICS 意法半导体 |   | |
STP10P6F6 | P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description These devices are P-channel Power MOSFETs developed using the STripFET™ F6 technology, with a new trench gate structure. | STMICROELECTRONICS 意法半导体 | | |
STP10P6F6 | P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications | STMICROELECTRONICS 意法半导体 | | |
STP10P6F6 | N-Channel 60 V(D-S) MOSFET 文件：1.09165 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | |
STP10P6F6 | P-channel -60 V, 0.13 Ohm typ., -10 A STripFET F6 Power MOSFET in TO-220 package | STMICROELECTRONICS 意法半导体 | | |
P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications | STMICROELECTRONICS 意法半导体 | | ||
P-channel 60 V, 0.15 廓 typ., 10 A STripFET??VI DeepGATE??Power MOSFET in DPAK and TO-220 packages Description These devices are P-channel Power MOSFETs developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages. Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Lo | STMICROELECTRONICS 意法半导体 | | ||
P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications | STMICROELECTRONICS 意法半导体 | | ||
P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description These devices are P-channel Power MOSFETs developed using the STripFET™ F6 technology, with a new trench gate structure. | STMICROELECTRONICS 意法半导体 | |
STP10P6F6产品属性
- 类型
描述
- 型号
STP10P6F6
- 功能描述
MOSFET P-Ch 60V 0.15Ohm 10A pwr MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
34750 |
原厂直销,现货供应,账期支持! |
|||
ON |
21+ |
TO220 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
STM |
ROHS |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
STM |
23+ |
TO-220-3 |
50000 |
原装正品 支持实单 |
|||
ST/意法 |
2517+ |
TO-220 |
8850 |
只做原装正品现货或订货假一赔十! |
|||
原装 |
25+ |
TO-220 |
20300 |
原装特价STP10P6F6即刻询购立享优惠#长期有货 |
|||
ST/意法 |
25+ |
ROHS |
880000 |
明嘉莱只做原装正品现货 |
|||
ST原装 |
25+23+ |
TO-220 |
24237 |
绝对原装正品全新进口深圳现货 |
|||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
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