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STD10P6F6价格
参考价格：￥1.1846
型号：STD10P6F6 品牌：STMicroelectronics 备注：这里有STD10P6F6多少钱，2025年最近7天走势，今日出价，今日竞价，STD10P6F6批发/采购报价，STD10P6F6行情走势销售排行榜，STD10P6F6报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STD10P6F6 | P-channel 60 V, 0.15 廓 typ., 10 A STripFET??VI DeepGATE??Power MOSFET in DPAK and TO-220 packages Description These devices are P-channel Power MOSFETs developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages. Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Lo | STMICROELECTRONICS 意法半导体 |   | |
STD10P6F6 | P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications | STMICROELECTRONICS 意法半导体 | | |
STD10P6F6 | P沟道-60 V、0.13 Ohm典型值、-10 A STripFET F6功率MOSFET，DPAK封装 | STMICROELECTRONICS 意法半导体 | | |
P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description These devices are P-channel Power MOSFETs developed using the STripFET™ F6 technology, with a new trench gate structure. | STMICROELECTRONICS 意法半导体 | | ||
P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications | STMICROELECTRONICS 意法半导体 | | ||
P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description These devices are P-channel Power MOSFETs developed using the STripFET™ F6 technology, with a new trench gate structure. | STMICROELECTRONICS 意法半导体 | | ||
P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 60 V(D-S) MOSFET 文件：1.09165 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | |
STD10P6F6产品属性
- 类型
描述
- 型号
STD10P6F6
- 功能描述
MOSFET P-Ch 60V 0.15Ohm 10A STripFET VI DeepGate
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
21+ |
TO-252 |
21 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST/意法 |
25+ |
TO-252 |
20300 |
ST/意法原装特价STD10P6F6即刻询购立享优惠#长期有货 |
|||
ST/意法 |
2517+ |
TO252 |
8850 |
只做原装正品现货或订货假一赔十! |
|||
NA |
23+ |
NA |
26094 |
10年以上分销经验原装进口正品,做服务型企业 |
|||
ST |
21+ |
TO252 |
1523 |
公司现货,不止网上数量!原装正品,假一赔十! |
|||
ST/意法 |
23+ |
TO-252 |
30000 |
全新原装现货,价格优势 |
|||
ST |
24+ |
TO-252 |
30000 |
公司新到进口原装现货假一赔十 |
|||
ST/意法 |
24+ |
TO-252 |
504562 |
免费送样原盒原包现货一手渠道联系 |
|||
ST |
23+ |
TO252 |
6996 |
只做原装正品现货 |
|||
ST/意法 |
2023+ |
TO252 |
2500 |
专注全新正品,优势现货供应 |
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STD10P6F6数据表相关新闻
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深圳市瑞智芯科技有限公司 联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号：STD120N4F6 类别 分立半导体产品 晶体管 - FET，MOSFET - 单个 制造商 STMicroelectronics 包装：2500 封装：TO-252-3
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製造商: STMicroelectronics 產品類型: MOSFET 技術: Si 安裝風格: SMD/SMT 封裝/外殼: TO-252-3 晶體管極性: N-Channel 通道數: 1 Channel Vds - 漏-源擊穿電壓: 80 V Id - C連續漏極電流: 80 A Rds On - 漏-源電阻: 6.5 mOhms Vgs - 閘極-源極電壓: - 20 V， + 20 V Vgs th - 門源門限電壓 : 4.5 V
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瀚佳科技（深圳）有限公司 专业进口电子元器件代理商
2020-8-17STCU8WMINI
STC U8W MINI，烧录器，全新原装当天发货或门市自取0755-82732291.
2019-3-14
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