4 th Generation, High-Accuracy, Ultra-Low-Power, 16-bit Temperature Sensor Platform

Highlights • Temperature accuracy: up to ±0.2 °C • Supply voltage: 1.08 V … 3.6 V • Average current: 0.4 µA (at meas. rate 1 Hz) • Idle current: 80 nA • I2C fast mode plus, CRC checksum • Available with multiple I2C addresses • Operating range: -40…125 °C • NIST traceability • JEDEC JESD4

±0.2°C 数字温度传感器

Sensirion高精度数字温度传感器STS4x系列制造周期领先行业。这款全数字化温度传感器平台性价比超高，多种精度规格可供选择， STS40为目前主打型号。Sensirion STS4x温度传感器拥有加强信号处理、两个不同I2C地址可供用户选择以及高达 1 MHz的通信速度。双平面无引脚（DFN）封装面积仅占1.5 × 1.5 mm²，同时保持0.5 mm的高度，不仅极具成本效益，而且便于将STS4x系列轻松集成至不同应用。另外，1.08至3.6 V的宽电源电压范围和低至每秒1次测量0.4 µA的典型平均耗电量使电池驱动设计成为可能。 STS4x温度传感器基于Sensirion CMOSen

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

4th Generation, High-Accuracy, Ultra-Low-Power, 16-bit Temperature Sensor Platform

General Description The STS4x is a fully digital temperature sensor platform offering different accuracy classes, currently available is the STS40. The I2C interface provides multiple preconfigured I2C addresses and enables an ultra-low power budget. Designed to cost, this four-pin dual-flatno-

4th Generation, High-Accuracy, Ultra-Low-Power, 16-bit Temperature Sensor Platform

General Description The STS4x is a fully digital temperature sensor platform offering different accuracy classes, currently available is the STS40. The I2C interface provides multiple preconfigured I2C addresses and enables an ultra-low power budget. Designed to cost, this four-pin dual-flatno-

4th Generation, High-Accuracy, Ultra-Low-Power, 16-bit Temperature Sensor Platform

General Description The STS4x is a fully digital temperature sensor platform offering different accuracy classes, currently available is the STS40. The I2C interface provides multiple preconfigured I2C addresses and enables an ultra-low power budget. Designed to cost, this four-pin dual-flatno-

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

N-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 package.

P -Channel E nhancement Mode F ield E ffect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 Package.

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

Dual N-Channel 40 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFETPower MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • CCFL Inverter • DC/DC Converter • HDD

Dual N-Channel Enhancement Mode Field E ffect Trans is tor

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

StripFET??MOSFET

DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab

DUAL N-CHANNEL 30V - 0.039ohm - 4A SO-8 STripFET??POWER MOSFET

Description The STS4DNF60L is a dual N-channel STripFETTM Power MOSFET realized with the second generation of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics

N - CHANNEL 60V - 0.045ohm - 4A SO-8 STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

N - CHANNEL 60V - 0.045ohm - 4A SO-8 STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

Dual N-Channel 60 V (D-S) 175 째C MOSFET

FEATURES • TrenchFET® power MOSFET • 100 Rg and UIS tested

N-channel - 30V - 0.044ohm - 4.5A SO-8 STripFET tm Power MOSFET plus schottky rectifier

Description This product associates the latest low voltage STripFET™ in n-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing a large variety of DC-DC converters for printers, portable equipment. Applications ■ Switching application

N-CHANNEL 30V - 0.044ohm - 4A SO-8 STripFET??II MOSFET PLUS SCHOTTKY RECTIFIER

Description This product associates the latest low voltage STripFET™ in n-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DCDC converters for printers, portable equipment, and cellular phones. Applications ■ Switching a

DUAL P-CHANNEL 20V - 0.07 ohm - 4A SO-8 STripFET??POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

DUAL P-CHANNEL 30V - 0.07 ohm - 4A SO-8 STripFET??POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab

Dual P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 UIS Tested APPLICATIONS • Load Switches

P-CHANNEL 20V - 0.07ohm - 4A SO-8 STripFET??MOSFET PLUS SCHOTTKY RECTIFIER

DESCRIPTION This product associates the latest low voltage STripFET™ in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones.

P-CHANNEL 20V - 0.06ohm - 4A SO-8 STripFET??MOSFET PLUS SCHOTTKY RECTIFIER

DESCRIPTION This product associates the latest low voltage STripFET™ in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones.

P-CHANNEL 30V - 0.07ohm - 4A SO-8 STripFET??MOSFET PLUS SCHOTTKY RECTIFIER

DESCRIPTION This product associates the latest low voltage STripFET™ in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones.

N-Channel 100 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses • 100 Rg Tested • 100 Avalanche Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch

N-CHANNEL 100V - 0.065 ohm - 4A SO-8 STripFET??II POWER MOSFET

DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Co

N-Channel 100 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses • 100 Rg Tested • 100 Avalanche Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch

P-CHANNEL 20V - 0.090 ohm - 4A SO- 2.7V-DRIVE STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

4th Generation, High-Accuracy, Ultra-Low-Power, 16-bit Temperature Sensor Platform

General Description The STS4x is a fully digital temperature sensor platform offering different accuracy classes, currently available is the STS40. The I2C interface provides multiple preconfigured I2C addresses and enables an ultra-low power budget. Designed to cost, this four-pin dual-flatno-

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IP67 SURFACE MOUNT GULL WING TAC 开关 触摸开关

轻触开关/按键开关

Surface Mount Process Sealed Tactile

文件：264.93 Kbytes Page：2 Pages

Connects legacy serial devices to 10/100Base-T Ethernet network.

文件：344.24 Kbytes Page：2 Pages

Secure Terminal Server with PCMCIA,

文件：627.19 Kbytes Page：2 Pages

Mosfets

封装/外壳：4-UDFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIGITAL TEMPERATURE SENSOR 传感器，变送器 温度传感器 - 模拟和数字输出

4th Generation, High-Accuracy, Ultra-Low-Power, 16-bit Temperature Sensor Platform

文件：574.69 Kbytes Page：15 Pages

4th Generation, High-Accuracy, Ultra-Low-Power, 16-bit Temperature Sensor Platform

文件：574.69 Kbytes Page：15 Pages

N- and P-Channel 30 V (D-S) MOSFET

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N-channel 30V - 0.044廓 - 5A - SO-8 STripFET??Power MOSFET

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Dual N-channel 30V - 0.039ohm - 4A SO-8 STripFET TM Power MOSFET

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Dual N-Channel 30-V (D-S) MOSFET

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Dual N-channel 30V - 0.039ohm - 4A SO-8 STripFET TM Power MOSFET

文件：330.9 Kbytes Page：12 Pages

N-channel 30V - 0.044ohm - 4A SO-8 STripFET TM MOSFET plus SCHOTTKY rectifier

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N-channel 30V - 0.044ohm - 4A SO-8 STripFET TM MOSFET plus SCHOTTKY rectifier

文件：290.04 Kbytes Page：12 Pages

Dual P-Channel MOSFET uses advanced trench technology

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4th Generation, High-Accuracy, Ultra-Low-Power, 16-bit Temperature Sensor Platform

文件：574.69 Kbytes Page：15 Pages

4th Generation, High-Accuracy, Ultra-Low-Power, 16-bit Temperature Sensor Platform

文件：574.69 Kbytes Page：15 Pages

4th Generation, High-Accuracy, Ultra-Low-Power, 16-bit Temperature Sensor Platform

文件：574.69 Kbytes Page：15 Pages