DESCRIPTION

This MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

General Features

■ TYPICAL RDS(on) (N-Channel) = 0.045 Ω

■ TYPICAL RDS(on) (P-Channel) = 0.100 Ω

■ STANDARD OUTLINE FOR EASY

AUTOMATED SURFACE MOUNT ASSEMBLY

■ LOW THRESHOLD DRIVE

APPLICATIONS

■ DC/DC CONVERTERS

■ BACK LIGHT INVERTER FOR LCD