丝印代码：STPSC8H065；650 V, 8 A high surge silicon carbide power Schottky diode

Features • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge capability • Insulated package TO-220AC Ins: – Insulated voltage: 2500 VRMS – Typical package capacitance: 7 pF • Power efficient product • ECOPACK®2 comp

650 V, 8 A high surge silicon carbide power Schottky diode

Features • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge capability • Insulated package TO-220AC Ins: – Insulated voltage: 2500 VRMS – Typical package capacitance: 7 pF • Power efficient product • ECOPACK®2 comp

650 V、8 A高浪涌碳化硅功率肖特基二极管

碳化硅（SiC）二极管是一款超高性能的功率肖特基二极管，是使用碳化硅基板制造的。宽带隙材料可用于设计650V额定电压的肖特基二极管。由于肖特基结构的关系，关断时不存在反向恢复现象，且振铃模式几乎可忽略。最小的容性关断行为受温度影响小。\n\n ST碳化硅（SiC）二极管特别适用于PFC应用，可在硬开关条件下大幅提升效能。其高耐正向浪涌电流能力可确保在瞬态期间提供良好的耐受性。 • 在应用电流范围内无反向恢复 \n• 开关行为受温度影响小 \n• 高耐正向浪涌电流能力 \n• 绝缘封装TO-220AC插件： \n •Insulated voltage: 2500 V rms \n •Typical package capacitance: 7 pF;

650 V power Schottky silicon carbide diode

文件：228.32 Kbytes Page：14 Pages

丝印代码：STPSC8H065D；650 V, 8 A high surge silicon carbide power Schottky diode

Features • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge capability • Insulated package TO-220AC Ins: – Insulated voltage: 2500 VRMS – Typical package capacitance: 7 pF • Power efficient product • ECOPACK®2 comp

丝印代码：STPSC8H065DI；650 V, 8 A high surge silicon carbide power Schottky diode

Features • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge capability • Insulated package TO-220AC Ins: – Insulated voltage: 2500 VRMS – Typical package capacitance: 7 pF • Power efficient product • ECOPACK®2 comp

丝印代码：STPSC8H065G；650 V, 8 A high surge silicon carbide power Schottky diode

Features • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge capability • Insulated package TO-220AC Ins: – Insulated voltage: 2500 VRMS – Typical package capacitance: 7 pF • Power efficient product • ECOPACK®2 comp

丝印代码：PSC8H065Y；Automotive 650 V, 8 A high surge silicon carbide power Schottky diode

Features • AEC-Q101 qualified • No reverse recovery charge in application current range • Switching behavior independent of temperature • Recommended to PFC applications • PPAP capable • VRRM guaranteed from -40 to 175 °C • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (with

650 V power Schottky silicon carbide diode

碳化硅（SiC）二极管是一款超高性能的功率肖特基二极管，是使用碳化硅基板制造的。宽带隙材料可用于设计650V额定电压的肖特基二极管。由于肖特基结构的关系，关断时不存在反向恢复现象，且振铃模式几乎可忽略。最小的容性关断行为受温度影响小。\n 这款双管配置的二极管特别适用于交错或无桥拓扑，可在硬开关条件下大幅提升效能。其高耐正向浪涌电流能力可确保在瞬态期间提供良好的耐受性。 • 无反向恢复，或反向恢复可忽略\n• 开关行为受温度影响小• 高耐正向浪涌电流能力;

8 A 650 V SiC功率肖特基二极管

这款8 A,650 V碳化硅二极管是具有超高性能的功率肖特基二极管并使用碳化硅基板制造。宽带隙材料可用于设计650V额定电压的肖特基二极管。由于肖特基结构的关系，关断时不存在反向恢复现象，且振铃模式几乎可忽略。最小的容性关断行为受温度影响小。\n\n  STPSC8H065DLF采用薄型PowerFLAT™8x8 HV封装，既可提供低正向导通压降带来的高能效品质，也可满足空间环境(如电信和网络，工业或可再生能源领域)对器件的高浪涌能力要求。 •  高度小于1毫米的封装 \n•  高爬电距离封装 \n• 无反向恢复，或反向恢复可忽略 \n•  没有或可忽略不计的反向恢复 \n• 高耐正向浪涌电流能力 \n•  低正向导通压降 \n•  高能效功率产品 \n• 元件符合ECOPACK®2 标准;

Automotive 650 V, 8 A high surge silicon carbide power Schottky diode

Features • AEC-Q101 qualified • No reverse recovery charge in application current range • Switching behavior independent of temperature • Recommended to PFC applications • PPAP capable • VRRM guaranteed from -40 to 175 °C • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (with

Automotive 650 V, 8 A high surge silicon carbide power Schottky diode

Features • AEC-Q101 qualified • No reverse recovery charge in application current range • Switching behavior independent of temperature • Recommended to PFC applications • PPAP capable • VRRM guaranteed from -40 to 175 °C • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (with

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：AUTOMOTIVE 650 V POWER SCHOTTKY 分立半导体产品 二极管 - 整流器 - 单

High forward surge capability

文件：152.96 Kbytes Page：8 Pages

High forward surge capability

文件：152.96 Kbytes Page：8 Pages

封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY SCHOTTKY 650V TO220 分立半导体产品 二极管 - 整流器 - 阵列

650 V power Schottky silicon carbide diode

文件：228.32 Kbytes Page：14 Pages

650 V power Schottky silicon carbide diode

文件：383.67 Kbytes Page：12 Pages

latch circuit

文件：64.349 Kbytes Page：4 Pages