STP9NK60Z价格

参考价格:¥4.6091

型号:STP9NK60Z 品牌:STMicroelectronics 备注:这里有STP9NK60Z多少钱,2025年最近7天走势,今日出价,今日竞价,STP9NK60Z批发/采购报价,STP9NK60Z行情走势销售排行榜,STP9NK60Z报价。
型号 功能描述 生产厂家 企业 LOGO 操作
STP9NK60Z

N-CHANNEL 600V - 0.85ohm - 7A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

STMICROELECTRONICS

意法半导体

STP9NK60Z

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.95Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

STP9NK60Z

N-Channel 650V (D-S) Power MOSFET

文件:1.10917 Mbytes Page:10 Pages

VBSEMI

微碧半导体

STP9NK60Z

N沟道600 V、0.85 Ohm典型值、7 A有齐纳管保护的SuperMESH(TM) 功率MOSFET,D2PAK封装

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 0.85ohm - 7A TO-220/TO-220FP/DPAK SuperFREDMesh MOSFET

Description The SuperFREDMesh™ series associates all advantages of reduced on-resistance, zener gate protection and very high dv/dt capability with a Fast body-drain recovery diode. Such series complements the “FDmesh™” advanced technology. General features ■ Very high dv/dt capability ■ 100 a

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V-0.85 Ohm-7A TO-220/TO-220FP/D2PAK Fast Diode SuperMESH MOSFET

DESCRIPTION The Fast SuperMESH™ series associates all advantages of reduced on-resistance, zener gate pro tection and very goog dv/dt capability with a Fast body-drain recovery diode. Such series complements the “FDmesh™” Advanced Technology. ■ TYPICAL RDS(on) = 0.85Ω ■ HIGH dv/dt CAPABILITY ■

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V-0.85 Ohm-7A TO-220/TO-220FP/D2PAK Fast Diode SuperMESH MOSFET

DESCRIPTION The Fast SuperMESH™ series associates all advantages of reduced on-resistance, zener gate pro tection and very goog dv/dt capability with a Fast body-drain recovery diode. Such series complements the “FDmesh™” Advanced Technology. ■ TYPICAL RDS(on) = 0.85Ω ■ HIGH dv/dt CAPABILITY ■

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 0.85ohm - 7A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.95Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-Channel 650V (D-S) Power MOSFET

文件:1.10916 Mbytes Page:10 Pages

VBSEMI

微碧半导体

N-channel 600V - 0.85廓 - 7A - D2PAK/TO-220FP/TO-220 SuperFREDMesh??Power MOSFET

文件:375.53 Kbytes Page:16 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V - 0.85 廓 - 7 A - D2PAK, TO-220FP, TO-220 SuperFREDMesh??Power MOSFET

文件:416.38 Kbytes Page:16 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650V (D-S) Power MOSFET

文件:1.10916 Mbytes Page:10 Pages

VBSEMI

微碧半导体

N-Channel 650V (D-S) Power MOSFET

文件:1.10937 Mbytes Page:10 Pages

VBSEMI

微碧半导体

N沟道600 V、0.85 Ohm典型值、7 A有齐纳管保护的SuperMESH(TM) 功率MOSFET,TO-220FP封装

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V-0.85 Ohm-7A TO-220/TO-220FP/D2PAK Fast Diode SuperMESH MOSFET

DESCRIPTION The Fast SuperMESH™ series associates all advantages of reduced on-resistance, zener gate pro tection and very goog dv/dt capability with a Fast body-drain recovery diode. Such series complements the “FDmesh™” Advanced Technology. ■ TYPICAL RDS(on) = 0.85Ω ■ HIGH dv/dt CAPABILITY ■

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V-0.85 Ohm-7A TO-220/TO-220FP/D2PAK Fast Diode SuperMESH MOSFET

DESCRIPTION The Fast SuperMESH™ series associates all advantages of reduced on-resistance, zener gate pro tection and very goog dv/dt capability with a Fast body-drain recovery diode. Such series complements the “FDmesh™” Advanced Technology. ■ TYPICAL RDS(on) = 0.85Ω ■ HIGH dv/dt CAPABILITY ■

STMICROELECTRONICS

意法半导体

N-Channel 650V (D-S) Power MOSFET

文件:1.10711 Mbytes Page:10 Pages

VBSEMI

微碧半导体

N-Channel 650V (D-S) Power MOSFET

文件:1.10711 Mbytes Page:10 Pages

VBSEMI

微碧半导体

N-Channel 650V (D-S) Power MOSFET

文件:1.10712 Mbytes Page:10 Pages

VBSEMI

微碧半导体

STP9NK60Z产品属性

  • 类型

    描述

  • 型号

    STP9NK60Z

  • 功能描述

    MOSFET N-Ch 600 Volt 7 Amp Zener SuperMESH

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-17 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
24+
NA/
470
优势代理渠道,原装正品,可全系列订货开增值税票
ST
20+
TO-220
38560
原装优势主营型号-可开原型号增税票
ST
0606+
TO-220
400
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ST
2526+
原厂封装
50000
15年芯片行业经验/只供原装正品:0755-83270522邹小姐
ST
23+
TO-220
10000
专做原装正品,假一罚百!
28
220
ST/意法
8
92
ST/意法
2450+
TO220
8850
只做原装正品假一赔十为客户做到零风险!!
ST/意法半导体
23+
N/A
20000
ST
25+23+
TO-220
16796
绝对原装正品全新进口深圳现货

STP9NK60Z数据表相关新闻