N-CHANNEL 600V - 0.85ohm - 7A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.95Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel 650V (D-S) Power MOSFET

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N-CHANNEL 600V - 0.85ohm - 7A TO-220/TO-220FP/DPAK SuperFREDMesh MOSFET

Description The SuperFREDMesh™ series associates all advantages of reduced on-resistance, zener gate protection and very high dv/dt capability with a Fast body-drain recovery diode. Such series complements the “FDmesh™” advanced technology. General features ■ Very high dv/dt capability ■ 100 a

N-CHANNEL 600V-0.85 Ohm-7A TO-220/TO-220FP/D2PAK Fast Diode SuperMESH MOSFET

DESCRIPTION The Fast SuperMESH™ series associates all advantages of reduced on-resistance, zener gate pro tection and very goog dv/dt capability with a Fast body-drain recovery diode. Such series complements the “FDmesh™” Advanced Technology. ■ TYPICAL RDS(on) = 0.85Ω ■ HIGH dv/dt CAPABILITY ■

N-CHANNEL 600V-0.85 Ohm-7A TO-220/TO-220FP/D2PAK Fast Diode SuperMESH MOSFET

DESCRIPTION The Fast SuperMESH™ series associates all advantages of reduced on-resistance, zener gate pro tection and very goog dv/dt capability with a Fast body-drain recovery diode. Such series complements the “FDmesh™” Advanced Technology. ■ TYPICAL RDS(on) = 0.85Ω ■ HIGH dv/dt CAPABILITY ■

N-CHANNEL 600V - 0.85ohm - 7A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.95Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel 650V (D-S) Power MOSFET

文件：1.10916 Mbytes Page：10 Pages

N-channel 600V - 0.85廓 - 7A - D2PAK/TO-220FP/TO-220 SuperFREDMesh??Power MOSFET

文件：375.53 Kbytes Page：16 Pages

N-channel 600 V - 0.85 廓 - 7 A - D2PAK, TO-220FP, TO-220 SuperFREDMesh??Power MOSFET

文件：416.38 Kbytes Page：16 Pages

N-Channel 650V (D-S) Power MOSFET

文件：1.10916 Mbytes Page：10 Pages

N-Channel 650V (D-S) Power MOSFET

文件：1.10937 Mbytes Page：10 Pages

N-CHANNEL 600V-0.85 Ohm-7A TO-220/TO-220FP/D2PAK Fast Diode SuperMESH MOSFET

DESCRIPTION The Fast SuperMESH™ series associates all advantages of reduced on-resistance, zener gate pro tection and very goog dv/dt capability with a Fast body-drain recovery diode. Such series complements the “FDmesh™” Advanced Technology. ■ TYPICAL RDS(on) = 0.85Ω ■ HIGH dv/dt CAPABILITY ■

N-CHANNEL 600V-0.85 Ohm-7A TO-220/TO-220FP/D2PAK Fast Diode SuperMESH MOSFET

DESCRIPTION The Fast SuperMESH™ series associates all advantages of reduced on-resistance, zener gate pro tection and very goog dv/dt capability with a Fast body-drain recovery diode. Such series complements the “FDmesh™” Advanced Technology. ■ TYPICAL RDS(on) = 0.85Ω ■ HIGH dv/dt CAPABILITY ■

N-Channel 650V (D-S) Power MOSFET

文件：1.10711 Mbytes Page：10 Pages

N-Channel 650V (D-S) Power MOSFET

文件：1.10711 Mbytes Page：10 Pages

N-Channel 650V (D-S) Power MOSFET

文件：1.10712 Mbytes Page：10 Pages