STP9NK60Z价格

参考价格:¥4.6091

型号:STP9NK60Z 品牌:STMicroelectronics 备注:这里有STP9NK60Z多少钱,2025年最近7天走势,今日出价,今日竞价,STP9NK60Z批发/采购报价,STP9NK60Z行情走势销售排行榜,STP9NK60Z报价。
型号 功能描述 生产厂家 企业 LOGO 操作
STP9NK60Z

N-CHANNEL 600V - 0.85ohm - 7A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

STMICROELECTRONICS

意法半导体

STP9NK60Z

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.95Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

STP9NK60Z

N-Channel 650V (D-S) Power MOSFET

文件:1.10917 Mbytes Page:10 Pages

VBSEMI

微碧半导体

STP9NK60Z

N沟道600 V、0.85 Ohm典型值、7 A有齐纳管保护的SuperMESH(TM) 功率MOSFET,D2PAK封装

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 0.85ohm - 7A TO-220/TO-220FP/DPAK SuperFREDMesh MOSFET

Description The SuperFREDMesh™ series associates all advantages of reduced on-resistance, zener gate protection and very high dv/dt capability with a Fast body-drain recovery diode. Such series complements the “FDmesh™” advanced technology. General features ■ Very high dv/dt capability ■ 100 a

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V-0.85 Ohm-7A TO-220/TO-220FP/D2PAK Fast Diode SuperMESH MOSFET

DESCRIPTION The Fast SuperMESH™ series associates all advantages of reduced on-resistance, zener gate pro tection and very goog dv/dt capability with a Fast body-drain recovery diode. Such series complements the “FDmesh™” Advanced Technology. ■ TYPICAL RDS(on) = 0.85Ω ■ HIGH dv/dt CAPABILITY ■

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V-0.85 Ohm-7A TO-220/TO-220FP/D2PAK Fast Diode SuperMESH MOSFET

DESCRIPTION The Fast SuperMESH™ series associates all advantages of reduced on-resistance, zener gate pro tection and very goog dv/dt capability with a Fast body-drain recovery diode. Such series complements the “FDmesh™” Advanced Technology. ■ TYPICAL RDS(on) = 0.85Ω ■ HIGH dv/dt CAPABILITY ■

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 0.85ohm - 7A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.95Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-Channel 650V (D-S) Power MOSFET

文件:1.10916 Mbytes Page:10 Pages

VBSEMI

微碧半导体

N-channel 600V - 0.85廓 - 7A - D2PAK/TO-220FP/TO-220 SuperFREDMesh??Power MOSFET

文件:375.53 Kbytes Page:16 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V - 0.85 廓 - 7 A - D2PAK, TO-220FP, TO-220 SuperFREDMesh??Power MOSFET

文件:416.38 Kbytes Page:16 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650V (D-S) Power MOSFET

文件:1.10916 Mbytes Page:10 Pages

VBSEMI

微碧半导体

N-Channel 650V (D-S) Power MOSFET

文件:1.10937 Mbytes Page:10 Pages

VBSEMI

微碧半导体

N沟道600 V、0.85 Ohm典型值、7 A有齐纳管保护的SuperMESH(TM) 功率MOSFET,TO-220FP封装

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V-0.85 Ohm-7A TO-220/TO-220FP/D2PAK Fast Diode SuperMESH MOSFET

DESCRIPTION The Fast SuperMESH™ series associates all advantages of reduced on-resistance, zener gate pro tection and very goog dv/dt capability with a Fast body-drain recovery diode. Such series complements the “FDmesh™” Advanced Technology. ■ TYPICAL RDS(on) = 0.85Ω ■ HIGH dv/dt CAPABILITY ■

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V-0.85 Ohm-7A TO-220/TO-220FP/D2PAK Fast Diode SuperMESH MOSFET

DESCRIPTION The Fast SuperMESH™ series associates all advantages of reduced on-resistance, zener gate pro tection and very goog dv/dt capability with a Fast body-drain recovery diode. Such series complements the “FDmesh™” Advanced Technology. ■ TYPICAL RDS(on) = 0.85Ω ■ HIGH dv/dt CAPABILITY ■

STMICROELECTRONICS

意法半导体

N-Channel 650V (D-S) Power MOSFET

文件:1.10711 Mbytes Page:10 Pages

VBSEMI

微碧半导体

N-Channel 650V (D-S) Power MOSFET

文件:1.10711 Mbytes Page:10 Pages

VBSEMI

微碧半导体

N-Channel 650V (D-S) Power MOSFET

文件:1.10712 Mbytes Page:10 Pages

VBSEMI

微碧半导体

STP9NK60Z产品属性

  • 类型

    描述

  • 型号

    STP9NK60Z

  • 功能描述

    MOSFET N-Ch 600 Volt 7 Amp Zener SuperMESH

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-9-27 11:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
STM
23+
TO-220FP-3
50000
原装正品 支持实单
ST
25+
TOTO-220ABNONISOL
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
VBsemi
24+
TO220
11000
原装正品 有挂有货 假一赔十
ST/意法半导体
24+
TO-220-3
6000
全新原装深圳仓库现货有单必成
ST
1932+
TO-220F
336
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST
2511
TO-220F
16900
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
ST
25+
TO-220F
16900
原装,请咨询
ST/意法
24+
TO-220F
9600
原装现货,优势供应,支持实单!
ST/意法
24+
TO-220FP-3
30
原厂授权代理 价格绝对优势
ST
2016+
TO220F
6000
公司只做原装,假一罚十,可开17%增值税发票!

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