N-Channel 650V (D-S) Power MOSFET

文件：1.10711 Mbytes Page：10 Pages

N-CHANNEL 600V-0.85 Ohm-7A TO-220/TO-220FP/D2PAK Fast Diode SuperMESH MOSFET

DESCRIPTION The Fast SuperMESH™ series associates all advantages of reduced on-resistance, zener gate pro tection and very goog dv/dt capability with a Fast body-drain recovery diode. Such series complements the “FDmesh™” Advanced Technology. ■ TYPICAL RDS(on) = 0.85Ω ■ HIGH dv/dt CAPABILITY ■

N-CHANNEL 600V-0.85 Ohm-7A TO-220/TO-220FP/D2PAK Fast Diode SuperMESH MOSFET

DESCRIPTION The Fast SuperMESH™ series associates all advantages of reduced on-resistance, zener gate pro tection and very goog dv/dt capability with a Fast body-drain recovery diode. Such series complements the “FDmesh™” Advanced Technology. ■ TYPICAL RDS(on) = 0.85Ω ■ HIGH dv/dt CAPABILITY ■

N-CHANNEL 600V - 0.85ohm - 7A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

N-Channel 650V (D-S) Power MOSFET

文件：1.10711 Mbytes Page：10 Pages

N-Channel 650V (D-S) Power MOSFET

文件：1.10712 Mbytes Page：10 Pages

N-CHANNEL 600V-0.85 Ohm-7A TO-220/TO-220FP/D2PAK Fast Diode SuperMESH MOSFET

DESCRIPTION The Fast SuperMESH™ series associates all advantages of reduced on-resistance, zener gate pro tection and very goog dv/dt capability with a Fast body-drain recovery diode. Such series complements the “FDmesh™” Advanced Technology. ■ TYPICAL RDS(on) = 0.85Ω ■ HIGH dv/dt CAPABILITY ■