型号 功能描述 生产厂家 企业 LOGO 操作
STP9NK60ZD

N-CHANNEL 600V - 0.85ohm - 7A TO-220/TO-220FP/DPAK SuperFREDMesh MOSFET

Description The SuperFREDMesh™ series associates all advantages of reduced on-resistance, zener gate protection and very high dv/dt capability with a Fast body-drain recovery diode. Such series complements the “FDmesh™” advanced technology. General features ■ Very high dv/dt capability ■ 100 a

STMICROELECTRONICS

意法半导体

STP9NK60ZD

N-channel 600 V - 0.85 廓 - 7 A - D2PAK, TO-220FP, TO-220 SuperFREDMesh??Power MOSFET

文件:416.38 Kbytes Page:16 Pages

STMICROELECTRONICS

意法半导体

STP9NK60ZD

N-channel 600V - 0.85廓 - 7A - D2PAK/TO-220FP/TO-220 SuperFREDMesh??Power MOSFET

文件:375.53 Kbytes Page:16 Pages

STMICROELECTRONICS

意法半导体

STP9NK60ZD

N-Channel 650V (D-S) Power MOSFET

文件:1.10916 Mbytes Page:10 Pages

VBSEMI

微碧半导体

N-CHANNEL 600V-0.85 Ohm-7A TO-220/TO-220FP/D2PAK Fast Diode SuperMESH MOSFET

DESCRIPTION The Fast SuperMESH™ series associates all advantages of reduced on-resistance, zener gate pro tection and very goog dv/dt capability with a Fast body-drain recovery diode. Such series complements the “FDmesh™” Advanced Technology. ■ TYPICAL RDS(on) = 0.85Ω ■ HIGH dv/dt CAPABILITY ■

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V-0.85 Ohm-7A TO-220/TO-220FP/D2PAK Fast Diode SuperMESH MOSFET

DESCRIPTION The Fast SuperMESH™ series associates all advantages of reduced on-resistance, zener gate pro tection and very goog dv/dt capability with a Fast body-drain recovery diode. Such series complements the “FDmesh™” Advanced Technology. ■ TYPICAL RDS(on) = 0.85Ω ■ HIGH dv/dt CAPABILITY ■

STMICROELECTRONICS

意法半导体

N-Channel 650V (D-S) Power MOSFET

文件:1.10711 Mbytes Page:10 Pages

VBSEMI

微碧半导体

N-Channel 650V (D-S) Power MOSFET

文件:1.10711 Mbytes Page:10 Pages

VBSEMI

微碧半导体

N-Channel 650V (D-S) Power MOSFET

文件:1.10712 Mbytes Page:10 Pages

VBSEMI

微碧半导体

STP9NK60ZD产品属性

  • 类型

    描述

  • 型号

    STP9NK60ZD

  • 功能描述

    MOSFET N-Ch 600 Volt 7.0Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-9-28 18:28:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VBsemi
21+
TO220
10010
一级代理,专注军工、汽车、医疗、工业、新能源、电力
STM
24+/25+
TO-220FP
22800
原装正品现货库存价优
ST
23+
TO-220F
8795
ST
24+
TO-220
1000
原装现货热卖
ST
2016+
TO220F
6000
公司只做原装,假一罚十,可开17%增值税发票!
ST全系列
25+23+
TO-220
26834
绝对原装正品全新进口深圳现货
VBsemi
24+
TO220
11000
原装正品 有挂有货 假一赔十
ST
17+
TO-220
6200
VBsemi
23+
TO-220
8560
受权代理!全新原装现货特价热卖!
ST
24+
TO-220-3
1002

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