N-CHANNEL 55V - 0.0062 ohm - 80A D2PAK/TO-220 STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Automotive-grade N-channel 55 V, 0.0062 Ohm typ., 42 A, STripFET(TM) II Power MOSFET in TO-220 package

N-channel 55 V, 0.0062 廓, 80 A, TO-220, D2PAK, I2PAK STripFET??II Power MOSFET

文件：951.07 Kbytes Page：15 Pages

Automotive-grade N-channel 55 V, 6.2 mΩ typ., 80 A, STripFET™ II Power MOSFETs in D²PAK and TO-220 packages

Features • AEC-Q101 qualified • Exceptional dv/dt capability • 100 avalanche tested • Low gate charge Applications • Switching applications Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize

N-CHANNEL 55V - 0.0060 ohm - 80A D2PAK/TO-220 STripFET??II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronis unique single feature size strip-based process. The resulting transistorshows extremely high packing density for low on-resistance, rugged avalanche characteristics andless critical alignment steps therefore a remarkable

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel 55 V, 0.006 Ohm typ., 80 A StripFET(TM) II Power MOSFET in TO-220 package

N-channel 55 V, 0.0060 廓, 80 A, TO-220, D2PAK STripFET??II Power MOSFET

文件：937.35 Kbytes Page：14 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL 55V - 0.0062 ohm - 80A D2PAK/TO-220 STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

N-Channel 60 V (D-S) MOSFET

文件：994.63 Kbytes Page：7 Pages

N-Channel 60 V (D-S) MOSFET

文件：995.56 Kbytes Page：7 Pages

N-channel 55 V, 0.0062 廓, 80 A, TO-220, D2PAK, I2PAK STripFET??II Power MOSFET

文件：951.07 Kbytes Page：15 Pages