isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL 55V - 0.0062 ohm - 80A D2PAK/TO-220 STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

汽车级N沟道55 V、0.0062 Ohm典型值、42 A STripFET II功率MOSFET，D2PAK封装

These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and c • AEC-Q101 qualified\n• Exceptional dv/dt capability• 100% avalanche tested\n• Low gate charge;

N-channel 55 V, 0.0062 廓, 80 A, TO-220, D2PAK, I2PAK STripFET??II Power MOSFET

文件：951.07 Kbytes Page：15 Pages

N-CHANNEL 55V - 0.0060 ohm - 80A D2PAK/TO-220 STripFET??II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronis unique single feature size strip-based process. The resulting transistorshows extremely high packing density for low on-resistance, rugged avalanche characteristics andless critical alignment steps therefore a remarkable

N沟道55 V、0.006 Ohm典型值、80 A STripFET(TM) II功率MOSFET，D2PAK封装

This Power MOSFET is the latest development of STMicroelectronis unique \\\"single feature size\\\" strip-based process. The resulting transistorshows extremely high packing density for low on-resistance, rugged avalanche characteristics andless critical alignment steps therefore a remarkable manufa • Low threshold drive;

丝印代码：B85NF55；Automotive-grade N-channel 55 V, 6.2 mΩ typ., 80 A, STripFET™ II Power MOSFETs in D²PAK and TO-220 packages

Features • AEC-Q101 qualified • Exceptional dv/dt capability • 100 avalanche tested • Low gate charge Applications • Switching applications Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize

N-channel 55 V, 0.0062 廓, 80 A, TO-220, D2PAK, I2PAK STripFET??II Power MOSFET

文件：951.07 Kbytes Page：15 Pages

N-channel 55 V, 0.0060 廓, 80 A, TO-220, D2PAK STripFET??II Power MOSFET

文件：937.35 Kbytes Page：14 Pages

N-channel 55 V, 0.0060 廓, 80 A, TO-220, D2PAK STripFET??II Power MOSFET

文件：937.35 Kbytes Page：14 Pages

N-channel 55 V, 0.0060 廓, 80 A, TO-220, D2PAK STripFET??II Power MOSFET

文件：937.35 Kbytes Page：14 Pages

N-CHANNEL 55V - 0.0062 ohm - 80A D2PAK/TO-220 STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

N-CHANNEL 55V - 0.0060 ohm - 80A D2PAK/TO-220 STripFET??II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronis unique single feature size strip-based process. The resulting transistorshows extremely high packing density for low on-resistance, rugged avalanche characteristics andless critical alignment steps therefore a remarkable