N沟道800 V, 515 mOhm典型值, 7 A MDmesh K6功率MOSFET, 采用TO-220封装

600V, 80A Field Stop IGBT

General Description Using novel field stop IGBT technology, Fairchild®s field stop IGBTs offer the optimum performance for induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Voltage:

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

600V, 80A Field Stop IGBT

General Description Using novel field stop IGBT technology, Fairchild®s field stop IGBTs offer the optimum performance for induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Voltage:

HiPerFAST IGBT

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High Current IGBT

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