N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a

N-CHANNEL 600V - 1.0 廓 - 7.2A TO-220/TO-220FP PowerMESH??MOSFET

文件：271.3 Kbytes Page：11 Pages

N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH TM IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power MESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with

N-CHANNEL 7A - 600V - T0-220 / DPAK PowerMESH IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has de signed an advanced family of IGBTs, the Power MESH™ IGBTs, with outstanding perfomances. The suffix F identifies a family optimized to achieve very low switching switching times for

N-channel 600V - 7A - TO-220 / DPAK Short circuit rated PowerMESH TM IGBT

文件：341.97 Kbytes Page：15 Pages

N-channel 600V - 7A - TO-220 / DPAK Short circuit rated PowerMESH TM IGBT

文件：341.97 Kbytes Page：15 Pages

N-CHANNEL 7A - 600V - TO-220FP PowerMESH TM IGBT

文件：257.57 Kbytes Page：9 Pages