isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5.7A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.9Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N - CHANNEL 800V - 1.6 Ohm - 5.7A - TO-220/TO-220FP

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) pe

N-Channel MOSFET

Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional ■ TYPICAL RDS(on) = 1.6 Ω\r\n■ EXTREMELY HIGH dv/dt CAPABILITY\r\n■ 100% AVALANCHE TESTED\r\n■ VERY LOW INTRINSIC CAPACITANCES\r\n■ GATE CHARGE MINIMIZED;

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5.7A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.9Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N - CHANNEL 800V - 1.6 Ohm - 5.7A - TO-220/TO-220FP

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) pe