型号 功能描述 生产厂家 企业 LOGO 操作
STP6NB80

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5.7A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 1.9Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

STP6NB80

N - CHANNEL 800V - 1.6 Ohm - 5.7A - TO-220/TO-220FP

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) pe

STMICROELECTRONICS

意法半导体

STP6NB80

N - CHANNEL 800V - 1.6 Ohm - 5.7A - TO-220/TO-220FP

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5.7A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 1.9Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N - CHANNEL 800V - 1.6 Ohm - 5.7A - TO-220/TO-220FP

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) pe

STMICROELECTRONICS

意法半导体

N-Channel MOSFET

STMICROELECTRONICS

意法半导体

STP6NB80产品属性

  • 类型

    描述

  • 型号

    STP6NB80

  • 制造商

    STMicroelectronics

更新时间:2025-12-28 16:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
24+
TO-220
1280
ST
17+
TO-220F
6200
ST
23+
TO220
5000
原装正品,假一罚十
ST
2447
TO-220
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ST
24+
TO-220F
12500
原装现货热卖
ST
03+
TO-220
86
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SST
原厂封装
9800
原装进口公司现货假一赔百
ST/意法
2022+
TO-220
12888
原厂代理 终端免费提供样品
ST
NEW
TO-220
8795
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
ST
24+
TO-220
6430
原装现货/欢迎来电咨询

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