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STP6N6价格
参考价格：￥2.7931
型号：STP6N60M2 品牌：STMicroelectronics 备注：这里有STP6N6多少钱，2025年最近7天走势，今日出价，今日竞价，STP6N6批发/采购报价，STP6N6行情走势销售排行榜，STP6N6报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) | STMICROELECTRONICS 意法半导体 |   | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 3.8A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 4.5A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
Extremely low gate charge Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 5.5A@ TC=25℃ ·Drain Source Voltage -VDSS=620V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 4A@ TC=25℃ ·Drain Source Voltage -VDSS=650V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.35Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N沟道600 V、1.06 Ohm典型值、4.5 A MDmesh M2功率MOSFET，TO-220封装 | STMICROELECTRONICS 意法半导体 | | ||
N沟道620 V、0.95 Ohm典型值、5.5 A SuperMESH3(TM) 功率MOSFET，TO-220封装 | STMICROELECTRONICS 意法半导体 | | ||
N-channel 620 V, 0.95 廓 typ., 5.5 A SuperMESH3??Power MOSFET in TO-220FP, I짼PAKFP, I짼PAK, TO-220, IPAK packages 文件：1.05244 Mbytes Page：19 Pages | STATEK | | ||
N-channel 620 V, 0.95 廓 typ., 5.5 A SuperMESH3 Power MOSFET in TO-220FP, IPAKFP, IPAK, TO-220, IPAK packages 文件：1.05244 Mbytes Page：19 Pages | STMICROELECTRONICS 意法半导体 | | ||
Extremely low gate charge 文件：737.76 Kbytes Page：18 Pages | STMICROELECTRONICS 意法半导体 | | ||
N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in TO-220 package | STMICROELECTRONICS 意法半导体 | | ||
N-Channel MOSFET uses advanced trench technology 文件：1.59171 Mbytes Page：4 Pages | DOINGTER 杜因特 | | ||
Panels and Panel Accessories 文件：2.00209 Mbytes Page：16 Pages | PENTAIR 滨特尔 | | ||
Panels and Panel Accessories 文件：2.00209 Mbytes Page：16 Pages | PENTAIR 滨特尔 | | ||
PERFORATED PANELS 文件：1.87751 Mbytes Page：16 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |
STP6N6产品属性
- 类型
描述
- 型号
STP6N6
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
200 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST/意法半导体 |
24+ |
TO-220-3 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
ST |
23+ |
TO-220 |
12500 |
ST系列在售,可接长单 |
|||
ST/意法半导体 |
23+ |
TO-220-3 |
12700 |
买原装认准中赛美 |
|||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ST原装 |
25+23+ |
TO-220 |
24089 |
绝对原装正品全新进口深圳现货 |
|||
ST/意法半导体 |
26+ |
TO-220-3 |
60000 |
只有原装 可配单 |
|||
ST/意法半导体 |
21+ |
TO-220-3 |
8860 |
只做原装,质量保证 |
|||
ST/意法 |
2450+ |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
||||
ST/意法 |
22+ |
N/A |
12245 |
现货,原厂原装假一罚十! |
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