位置：首页 > IC中文资料第1185页 > STP60NE06
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low onresistance,rugged avalance characteristics and less critical alignment steps therefore a remarkable | STMICROELECTRONICS 意法半导体 |   | ||
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low onresistance,rugged avalance characteristics and less critical alignment steps therefore a remarkable | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 60V - 0.014ohm - 60A TO-220/TO-220FP STripFET POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of STMicroelectronis unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 60V - 0.014ohm - 60A TO-220/TO-220FP STripFET POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of STMicroelectronis unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor 文件：245.27 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel 60-V (D-S) MOSFET 文件：981.42 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 60V - 0.014ohm - 60A TO-220/TO-220FP STripFET POWER MOSFET | STMICROELECTRONICS 意法半导体 | |
STP60NE06产品属性
- 类型
描述
- 型号
STP60NE06
- 功能描述
MOSFET N-Ch 60 Volt 60 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
18500 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST |
NEW |
TO-220F |
8795 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
ST |
23+ |
TO-220 |
16900 |
正规渠道,只有原装! |
|||
ST |
17+ |
TO-220F |
6200 |
||||
ST |
24+ |
TO-220 |
17 |
||||
ST |
2447 |
NA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ST |
24+ |
TO-220F |
10000 |
原装现货热卖 |
|||
ST |
20+ |
TO220ISOFULLPACK |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
ST |
05+ |
TO220 |
220 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
24+ |
TO-220 |
6430 |
原装现货/欢迎来电咨询 |
STP60NE06规格书下载地址
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DdatasheetPDF页码索引
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