isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5A@ TC=25℃ ·Drain Source Voltage -VDSS= 300V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1.2 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ CHOPPER R

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 300V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1.2 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ CHOPPER R

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1.25 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ CHOPPER

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5A@ TC=25℃ ·Drain Source Voltage -VDSS= 300V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 300V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1.25 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ CHOPPER

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=5.4A@ TC=25℃ ·Drain Source Voltage -VDSS=300V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.9Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

300V N-Channel MOSFET

Features • 5.4A, 300V, RDS(on) = 0.9Ω @VGS = 10 V • Low gate charge ( typical 9.8 nC) • Low Crss ( typical 9.5 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

300V N-Channel MOSFET

300V N-Channel MOSFET

300V N-Channel MOSFET

Features • 5.4A, 300V, RDS(on) = 0.9Ω @VGS = 10 V • Low gate charge ( typical 9.8 nC) • Low Crss ( typical 9.5 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

Fast Switching Speed

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