型号 功能描述 生产厂家&企业 LOGO 操作
STB4NB80FP

N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESHO MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

STMICROELECTRONICS

意法半导体

N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESHO MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

STMICROELECTRONICS

意法半导体

N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESHO MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

STMICROELECTRONICS

意法半导体

N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per

STMICROELECTRONICS

意法半导体

N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per

STMICROELECTRONICS

意法半导体

STB4NB80FP产品属性

  • 类型

    描述

  • 型号

    STB4NB80FP

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESHO MOSFET

更新时间:2025-8-13 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
22+
TO-220
100000
代理渠道/只做原装/可含税
ST
24+
TO-263
90000
一级代理商进口原装现货、假一罚十价格合理
ST
23+
TO-263
8795
ST
24+
TO202-3
2987
只售原装自家现货!诚信经营!欢迎来电!
ST
25+23+
TO263
75834
绝对原装正品现货,全新深圳原装进口现货
ST
22+
TO
25000
只做原装进口现货,专注配单
ST
25+
TO-263
4500
全新原装、诚信经营、公司现货销售!
ST/意法
23+
TO-263D2-PAK
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
ST
24+
SOP263
397
ST
2447
TO-263
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货

STB4NB80FP数据表相关新闻

  • STB35N65DM2

    STB35N65DM2芯片是一种功能强大、性能稳定的高性能功率MOSFET,具有广泛的应用前景。它的高效率、可靠性和多种保护功能使得它成为各种功率应用中的理想选择,将为工业、汽车和消费电子等领域的发展提供强大的支持。

    2023-11-24
  • STBR3012G2Y-T

    https://hfx03.114ic.com

    2022-12-14
  • STB13NM60N

    热卖-原装正品现货

    2022-8-11
  • STBC08PMR

    STBC08PMR 电池充电管理芯片 ST 封装DFN6

    2022-8-2
  • STC-1000V-0.15UF-2V 脚距27.5

    STC-1000V-0.15UF-2V 脚距27.5电容现货 元器件配单

    2022-1-10
  • STB20N90K5 瑞智芯 只有原装

    深圳市瑞智芯科技有限公司 联系人:彭先生 QQ:2851196982 直线:0755-82991809 手机:13787628849 邮箱:pc@szruizhixin.com 地址:深圳市福田区中航路42号中航北苑大厦A座6A2 型号:STB20N90K5 类别 分立半导体产品 晶体管 - FET,MOSFET - 单个 制造商 STMicroelectronics 包装:1000 封装:TO-263-3

    2021-9-18