位置：首页 > IC中文资料第770页 > STB4NB80
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STB4NB80 | N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESHO MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex | STMICROELECTRONICS 意法半导体 |   | |
N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESHO MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESHO MOSFET | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per | STMICROELECTRONICS 意法半导体 | | ||
Power MOSFET 文件：2.12158 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | |
STB4NB80产品属性
- 类型
描述
- 型号
STB4NB80
- 功能描述
MOSFET N-Ch 800 Volt 4 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IBM |
26+ |
BGA |
20000 |
公司只有正品,实单来谈 |
|||
IBM |
20+ |
BGA |
19570 |
原装优势主营型号-可开原型号增税票 |
|||
ST |
23+ |
TO263 |
6996 |
只做原装正品现货 |
|||
STM |
22+ |
TO-263 |
20000 |
公司只做原装 品质保障 |
|||
ST/意法 |
22+ |
TO-220 |
101024 |
||||
IBM |
2450+ |
BGA |
6540 |
只做原装正品现货!或订货假一赔十! |
|||
IBM |
2138+ |
BGA |
8960 |
专营BGA,QFP原装现货,假一赔十 |
|||
JST/日压 |
24+ |
端子 |
5000 |
原厂原装，价格优势，欢迎洽谈！ |
|||
ST |
25+ |
SOP28 |
20000 |
原装，请咨询 |
|||
ST |
26+ |
SOP28 |
60000 |
只有原装 可配单 |
STB4NB80规格书下载地址
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深圳市瑞智芯科技有限公司 联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号：STB20N90K5 类别 分立半导体产品 晶体管 - FET，MOSFET - 单个 制造商 STMicroelectronics 包装：1000 封装：TO-263-3
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DdatasheetPDF页码索引
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