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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STB4NB80 | N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESHO MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex | STMICROELECTRONICS 意法半导体 |   | |
N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESHO MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESHO MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per | STMICROELECTRONICS 意法半导体 | |
STB4NB80产品属性
- 类型
描述
- 型号
STB4NB80
- 功能描述
MOSFET N-Ch 800 Volt 4 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
24+ |
TO-263 |
90000 |
一级代理商进口原装现货、假一罚十价格合理 |
|||
ST |
23+ |
TO-263 |
8795 |
||||
ST |
24+ |
TO-263 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
ST |
25+23+ |
TO263 |
75834 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
ST |
22+ |
TO-220 |
25000 |
只做原装进口现货,专注配单 |
|||
ST |
23+ |
TO263 |
6996 |
只做原装正品现货 |
|||
ST |
25+ |
TO-263 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
ST/意法 |
23+ |
TO-263 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
24+ |
N/A |
6500 |
|||||
ST |
2447 |
TO-263 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
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STB4NB80规格书下载地址
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DdatasheetPDF页码索引
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