N-channel 1500 V, 2.5 A, 6 Ω typ., PowerMESH Power MOSFETs in TO-3PF, H2PAK-2, TO-220 and TO247 packages

Features • 100 avalanche tested • Intrinsic capacitances and Qg minimized • High speed switching • Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.) Applications • Switching applications Description These Power MOSFETs are designed using the STMicroelectron

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 1500V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 9Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

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N-channel 1500 V, 6 廓, 2.5 A, PowerMESH??Power MOSFET

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N-channel 1500 V, 6 廓, 2.5 A, PowerMESH??Power MOSFET in TO-220, TO-247, TO-3PF

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isc N-Channel MOSFET Transistor

·FEATURES ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- VDSS: 1500V(Min) ·Static Drain-Source On-Resistance RDS(on):

isc N-Channel MOSFET Transistor

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Power switch circuit of adaptor and charger.

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N-channel Enhanced VDMOSFETs

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N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

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