N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

■TYPICALRDS(on)=3.2Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SWITCHMODEPOWERSUPPLIES(SMPS) ■CHOPPERREGULATORS,CONVERTERS

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

■TYPICALRDS(on)=3.2Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SWITCHMODEPOWERSUPPLIES(SMPS) ■CHOPPERREGULATORS,CONVERTERS

2Amps,600VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC2N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsin

N2Amps竊?00VoltsN-ChannelMOSFET

Description TheET2N60N-CeannelenhancementmodesilicongatepowerMOSFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,switchingconverters,solenoid,motordrivers,relaydrivers. Features ●RDS(ON)=5.00Ω@VGS=10V ●Lowgatecharge

2Amps,600/650VoltsN-CHANNELPOWERMOSFET

TheUTC2N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowerupplies,PWM

600VN-ChannelPowerMOSFET

Features ●RDS(ON)

2A600VN-channelEnhancementModePowerMOSFET

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