N-channel 600 V, 0.14 Ω typ., 20 A MDmeshTM M2 Power MOSFETs in TO-220 and TO-247 packages

Features  Extremely low gate charge  Excellent output capacitance (COSS) profile  100 avalanche tested  Zener-protected Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these de

封装/外壳：TO-220-3 包装：卷带（TR） 描述：MOSFET N-CHANNEL 600V 20A TO220 分立半导体产品 晶体管 - FET，MOSFET - 单个

N沟道600 V、0.14 Ohm典型值、20 A MDmesh M2功率MOSFET，TO-220封装

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) -RDS(on) = 165mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 600 V, 0.14 Ω typ., 20 A MDmeshTM M2 Power MOSFET in TO-220FP ultra narrow leads package

Features  Extremely low gate charge  Excellent output capacitance (COSS) profile  100 avalanche tested  Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the devi

N-channel 600 V, 0.14 廓 typ., 20 A MDmesh??M2 Power MOSFETs in TO-220FP and I짼PAKFP packages

文件：434.84 Kbytes Page：15 Pages

N-channel 600 V, 0.14 廓 typ., 20 A MDmesh??M2 Power MOSFETs in TO-220FP and I짼PAKFP packages

文件：434.84 Kbytes Page：15 Pages