N-channel 600 V, 0.14 Ω typ., 20 A MDmeshTM M2 Power MOSFET in TO-220FP ultra narrow leads package

Features  Extremely low gate charge  Excellent output capacitance (COSS) profile  100 avalanche tested  Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the devi

N-channel 600 V, 0.14 Ω typ., 20 A MDmeshTM M2 Power MOSFETs in TO-220 and TO-247 packages

Features  Extremely low gate charge  Excellent output capacitance (COSS) profile  100 avalanche tested  Zener-protected Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these de

N-channel 600 V, 0.14 Ω typ., 20 A MDmeshTM M2 Power MOSFETs in TO-220 and TO-247 packages

Features  Extremely low gate charge  Excellent output capacitance (COSS) profile  100 avalanche tested  Zener-protected Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these de

N-channel 600 V, 0.14 廓 typ., 20 A MDmesh??M2 Power MOSFETs in TO-220FP and I짼PAKFP packages

文件：434.84 Kbytes Page：15 Pages

N-channel 600 V, 0.14 廓 typ., 20 A MDmesh??M2 Power MOSFETs in TO-220FP and I짼PAKFP packages

文件：434.84 Kbytes Page：15 Pages