型号 功能描述 生产厂家 企业 LOGO 操作
STP21N06LFI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 14A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 85mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

STP21N06LFI

N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.065 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ LOGIC LEVEL COMPATIBLE INPUT ■ 175 °C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARA

STMICROELECTRONICS

意法半导体

N-channel TrenchMOSÔ transistor Logic level FET

FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Logic level compatible GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:- • d.c. to d.c. converters • swi

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Logic level compatible Applications: • d.c. to d.c. co

Philips

飞利浦

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Logic level compatible Applications: • d.c. to d.c. co

Philips

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 19A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 70mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended

Philips

飞利浦

STP21N06LFI产品属性

  • 类型

    描述

  • 型号

    STP21N06LFI

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

更新时间:2025-10-13 11:04:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
2447
TO-220F
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ST
2016+
TO-220AB
3500
只做原装,假一罚十,公司可开17%增值税发票!
ST/意法
23+
TO-220
50000
全新原装正品现货,支持订货
ST全系列
25+23+
TO-220F
26355
绝对原装正品全新进口深圳现货
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ST
24+
TO-220F
15000
原装现货热卖
ST/意法半导体
2021+
Through Hole
7600
原装现货,欢迎询价
ST
NEW
TO-220F
8795
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
24+
N/A
8450
ST
23+
TO-220F
10000
专做原装正品,假一罚百!

STP21N06LFI数据表相关新闻