TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended

N-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Logic-Level Gate Drive • Fast Switching • Compliant to RoHS Directive 2002/95/EC

N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Logic level compatible Applications: • d.c. to d.c. co

TrenchMOSO transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters

N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Logic level compatible Applications: • d.c. to d.c. co

TrenchMOSO transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters