型号 功能描述 生产厂家 企业 LOGO 操作
STP20NE06

N - CHANNEL 60V - 0.06 ohm - 20A TO-220/TO-220FP STripFET POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ” Single Feature Size ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a rem

STMICROELECTRONICS

意法半导体

STP20NE06

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 0.08Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

STP20NE06

N - CHANNEL 60V - 0.06 ohm - 20A TO-220/TO-220FP STripFET POWER MOSFET

STMICROELECTRONICS

意法半导体

N - CHANNEL 60V - 0.06 ohm - 20A TO-220/TO-220FP STripFET POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ” Single Feature Size ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a rem

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 13A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 0.08Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 0.08Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N - CHANNEL 60V - 0.06 ohm - 20A TO-220/TO-220FP STripFET POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ” Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a rem

STMICROELECTRONICS

意法半导体

N - CHANNEL 60V - 0.06 ohm - 20A TO-220/TO-220FP STripFET POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ” Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a rem

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 13A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 0.08Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N - CHANNEL 60V - 0.06 ohm - 20A TO-220/TO-220FP STripFET POWER MOSFET

STMICROELECTRONICS

意法半导体

N-Channel 60 V (D-S) MOSFET

文件:1.28363 Mbytes Page:9 Pages

VBSEMI

微碧半导体

N - CHANNEL 60V - 0.06ohm - 20A D2PAK STripFET] POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronis unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remark

STMICROELECTRONICS

意法半导体

N - CHANNEL 60V - 0.06ohm - 20A TO-263 STripFET] POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronis unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remark

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE ??SINGLE FEATURE SIZE ??POWER MOSFET

DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable ma

STMICROELECTRONICS

意法半导体

N-Channel 60 V (D-S) MOSFET

文件:1.31336 Mbytes Page:9 Pages

VBSEMI

微碧半导体

STP20NE06产品属性

  • 类型

    描述

  • 型号

    STP20NE06

  • 功能描述

    MOSFET RO 511-STP36NF06

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-9-30 18:35:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
20+
TO-220
38560
原装优势主营型号-可开原型号增税票
ST
2108+
TO-220
250
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST
NEW
TO-220
18689
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
ST
23+
TO-220
5000
专做原装正品,假一罚百!
ST全系列
25+23+
TO-220
26215
绝对原装正品全新进口深圳现货
ST
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
STM
1998
10
公司优势库存 热卖中!
ST
24+
N/A
2520
ST
23+
TO-220
16900
正规渠道,只有原装!
ST
17+
TO-220
6200

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