channel 1200V - 30廓 - 500mA - TO-220 Zener - protected SuperMESH??Power MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser

channel 1200V - 30Ω - 500mA - TO-220 Zener - protected SuperMESH™ Power MOSFET

GOLD BONDED DIODES

[VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

5.3A, 1200V, NPT Series N-Channel IGBT

The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduct

Trench Field-Stop Technology IGBT

DESCRIPTION · Fast switching · Low Switching Losses APPLICATIONS · AC and DC motor controls · Power · Lighting

5.3A, 1200V, NPT Series N-Channel IGBT

The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduct

5.3A, 1200V, NPT Series N-Channel IGBT

The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduct