N-channel 650 V - 0.25 廓 - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh??Power MOSFET

Description This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most dema

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 15.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.27Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 15.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.27Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 650 V - 0.25 廓 - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh??Power MOSFET

Description This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most dema

N-channel 650 V - 0.25 廓 - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh??Power MOSFET

Description This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most dema

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 15.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.27Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.