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STP18N60M2价格
参考价格:¥7.1164
型号:STP18N60M2 品牌:STMicroelectronics 备注:这里有STP18N60M2多少钱,2024年最近7天走势,今日出价,今日竞价,STP18N60M2批发/采购报价,STP18N60M2行情走势销售排行榜,STP18N60M2报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
STP18N60M2 | Lowgateinputresistance Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh™technology:MDmeshIIPlus™lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | ||
STP18N60M2 | N-channel600V,0.255Ωtyp.,13AMDmeshM2PowerMOSFETsinD2PAK,I2PAK,TO-220andTO-247packages Features •Extremelylowgatecharge •Excellentoutputcapacitance(COSS)profile •100avalanchetested •Zener-protected Application •Switchingapplications •LLCconverters,resonantconverters Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingtheMDmesh™M2 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | ||
N-channel600V,0.255typ.,13AMDmeshM2PowerMOSFETinaTO-220FPultranarrowleadspackage Features •Extremelylowgatecharge •Excellentoutputcapacitance(COSS)profile •100avalanchetested •Zener-protected Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmeshM2 technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedevice | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=13A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.28Ω(Max)@VGS=10V APPLICATIONS ·Switching ·LLCconverters,resonantconverters | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-channel600V,0.255Ωtyp.,13AMDmeshM2PowerMOSFETsinD2PAK,I2PAK,TO-220andTO-247packages Features •Extremelylowgatecharge •Excellentoutputcapacitance(COSS)profile •100avalanchetested •Zener-protected Application •Switchingapplications •LLCconverters,resonantconverters Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingtheMDmesh™M2 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
Lowgateinputresistance Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh™technology:MDmeshIIPlus™lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
Lowgateinputresistance Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmeshM2technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedeviceexhibitslowon-resistanceandoptimizedswitchingcharacteristics,renderingitsuitableforthemostdemandinghighefficiencycon | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 |
STP18N60M2产品属性
- 类型
描述
- 型号
STP18N60M2
- 制造商
STMicroelectronics
- 功能描述
POWER MOSFET - Rail/Tube
- 制造商
STMicroelectronics
- 功能描述
MOSFET N-CH 600V TO-220
- 制造商
STMicroelectronics
- 功能描述
STP18N60M2 Series 600 V 13 A 0.28 Ohm N-channel Power MOSFET - TO-220-3
- 制造商
STMicroelectronics
- 功能描述
Power MOSFET Nch MDmesh II plus 600V 13A
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法半导体 |
21+ |
TO-220-3 |
8800 |
公司只做原装正品 |
|||
ST |
2020+ |
TO-220 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
ST |
21+ |
TO-220 |
10000 |
原装,品质保证,请来电咨询 |
|||
STMicroelectronics |
24+ |
TO-220 |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
ST |
2023+ |
TO-220 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
ST |
21+ |
TO-220 |
10000 |
公司只做原装,诚信经营 |
|||
ST |
21+ |
TO-220 |
2050 |
十年信誉,只做原装,有挂就有现货! |
|||
ST/意法 |
22+ |
TO-220-3 |
15000 |
原厂原装现货 |
|||
ST/意法 |
2022 |
TO220 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
ST |
23+ |
TO220 |
700000 |
公主请下单 柒号只做原装 |
STP18N60M2规格书下载地址
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