STB18N60M2价格

参考价格:¥6.7918

型号:STB18N60M2 品牌:STMicroelectronics 备注:这里有STB18N60M2多少钱,2025年最近7天走势,今日出价,今日竞价,STB18N60M2批发/采购报价,STB18N60M2行情走势销售排行榜,STB18N60M2报价。
型号 功能描述 生产厂家 企业 LOGO 操作
STB18N60M2

Low gate input resistance

Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They

STMICROELECTRONICS

意法半导体

STB18N60M2

N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFETs in D2PAK,I2PAK, TO-220 and TO-247 packages

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100 avalanche tested • Zener-protected Application • Switching applications • LLC converters, resonant converters Description These devices are N-channel Power MOSFETs developed using the MDmesh™ M2

STMICROELECTRONICS

意法半导体

STB18N60M2

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 13A@ TC=25℃ · Drain Source Voltage -VDSS=600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.28Ω(Max)@VGS= 10V APPLICATIONS · Switching · LLC converters, resonant converters

ISC

无锡固电

STB18N60M2

N沟道600 V、0.255 Ohm典型值、13 A MDmesh M2功率MOSFET,D2PAK封装

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFETs in D2PAK,I2PAK, TO-220 and TO-247 packages

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100 avalanche tested • Zener-protected Application • Switching applications • LLC converters, resonant converters Description These devices are N-channel Power MOSFETs developed using the MDmesh™ M2

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.255 typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100 avalanche tested • Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device

STMICROELECTRONICS

意法半导体

Low gate input resistance

Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency con

STMICROELECTRONICS

意法半导体

STB18N60M2产品属性

  • 类型

    描述

  • 型号

    STB18N60M2

  • 制造商

    STMicroelectronics

  • 功能描述

    POWER MOSFET - Tape and Reel

  • 制造商

    STMicroelectronics

  • 功能描述

    MOSFET N-CH 600V D2PAK

  • 制造商

    STMicroelectronics

  • 功能描述

    STB18N60M2 Series 600 V 13 A 280 mOhm N-channel Power MOSFET - TO-263-3

  • 制造商

    STMicroelectronics

  • 功能描述

    N-channel 600 V, 0.255

  • 制造商

    STMicroelectronics

  • 功能描述

    N-channel 600 V, 0.255 ?X typ., 13 A MDmesh II Plus? low Qg Power MOSFET in D2PAK, TO-220 and TO-247 packages

更新时间:2025-10-4 17:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
25+
TO263
880000
明嘉莱只做原装正品现货
ST/意法半导体
21+
TO-263-3
8080
只做原装,质量保证
ST/意法
23+
NA
12730
原装正品代理渠道价格优势
ST
24+
N/A
8000
全新原装正品,现货销售
SST
原厂封装
9800
原装进口公司现货假一赔百
ST/意法半导体
23+
TO-263-3
8080
原装正品,支持实单
ST/意法半导体
25+
TO-263-3
6000
原厂原装 欢迎询价
ST/意法半导体
25+
原厂封装
10280
ST(意法)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
ST/意法
14+
TO263
168
原装现货

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