isc N-Channel MOSFET Transistor

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High avalanche ruggedness

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N-Channel MOSFET uses advanced SGT technology

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N沟道100 V、0.0036 Ohm典型值、110 A STripFET F7功率MOSFET，TO-220封装

Automotive N-channel 100 V, 4.2 m廓 typ., 110 A, STripFET F7 Power MOSFET in a TO-220 package

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N-channel 100 V STripFET F7 Power MOSFET in TO-220 package for Automotive Applications

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM150N10G series MOSFETs is a new technology, which combines an innovative super junc

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 57A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 15mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 57A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 16mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

N-Channel PowerTrench짰 MOSFET 100V, 57A, 15m廓

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N-Channel PowerTrench짰 MOSFET 100 V, 57 A, 16 m廓

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