STP13NM60N价格

参考价格:¥9.0936

型号:STP13NM60N 品牌:STMicroelectronics 备注:这里有STP13NM60N多少钱,2025年最近7天走势,今日出价,今日竞价,STP13NM60N批发/采购报价,STP13NM60N行情走势销售排行榜,STP13NM60N报价。
型号 功能描述 生产厂家 企业 LOGO 操作
STP13NM60N

N-channel 600 V, 0.28 ohm typ., 11 A MDmesh II Power MOSFET in TO-220FP, I2PAK, TO-220, IPAK, TO-247 packages

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab

STMICROELECTRONICS

意法半导体

STP13NM60N

Isc N-Channel MOSFET Transistor

文件:318.25 Kbytes Page:2 Pages

ISC

无锡固电

STP13NM60N

N沟道600 V、0.28 Ohm典型值、11 A MDmesh(TM) II功率MOSFET,TO-220封装

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.32 typ., 11 A, FDmesh II Power MOSFET (with fast diode) in DPAK

Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. T

STMICROELECTRONICS

意法半导体

isc N-Channel Mosfet Transistor

文件:327.49 Kbytes Page:2 Pages

ISC

无锡固电

N-channel 600 V, 325 mOhm typ., 11 A FDmesh II Power MOSFET in a TO-220 package

STMICROELECTRONICS

意法半导体

13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 13NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power

UTC

友顺

N-channel 600 V, 0.320 廓, 10 A PowerFLAT??(8x8) HV MDmesh??II Power MOSFET

Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitabl

STMICROELECTRONICS

意法半导体

Low gate input resistance

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab

STMICROELECTRONICS

意法半导体

N-Channel 650V (D-S) Power MOSFET

文件:1.06718 Mbytes Page:9 Pages

VBSEMI

微碧半导体

Isc N-Channel MOSFET Transistor

文件:289.83 Kbytes Page:2 Pages

ISC

无锡固电

STP13NM60N产品属性

  • 类型

    描述

  • 型号

    STP13NM60N

  • 功能描述

    MOSFET N-Ch 600 Volt 11 Amp Power MDmesh

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-9-28 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
2016+
TO220
11000
公司只做原装,假一罚十,可开17%增值税发票!
ST/意法
24+
TO-220A
3800
大批量供应优势库存热卖
ST(意法半导体)
2024+
TO-220-3
500000
诚信服务,绝对原装原盘
ST
1829
TO-220
100
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST/意法
25+
TO-220
32360
ST/意法全新特价STP13NM60N即刻询购立享优惠#长期有货
STM
24+/25+
TO-220AB
7850
原装正品现货库存价优
ST
11+
TO-220
135
只做原装正品
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ST/意法半导体
24+
Through Hole
16900
原装,正品
ST
2024+
N/A
70000
柒号只做原装 现货价秒杀全网

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