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STP13NM60N价格
参考价格:¥9.0936
型号:STP13NM60N 品牌:STMicroelectronics 备注:这里有STP13NM60N多少钱,2025年最近7天走势,今日出价,今日竞价,STP13NM60N批发/采购报价,STP13NM60N行情走势销售排行榜,STP13NM60N报价。型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
---|---|---|---|---|
STP13NM60N | N-channel 600 V, 0.28 ohm typ., 11 A MDmesh II Power MOSFET in TO-220FP, I2PAK, TO-220, IPAK, TO-247 packages Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab | STMICROELECTRONICS 意法半导体 | ||
STP13NM60N | Isc N-Channel MOSFET Transistor 文件:318.25 Kbytes Page:2 Pages | ISC 无锡固电 | ||
STP13NM60N | N沟道600 V、0.28 Ohm典型值、11 A MDmesh(TM) II功率MOSFET,TO-220封装 | STMICROELECTRONICS 意法半导体 | ||
N-channel 600 V, 0.32 typ., 11 A, FDmesh II Power MOSFET (with fast diode) in DPAK Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. T | STMICROELECTRONICS 意法半导体 | |||
isc N-Channel Mosfet Transistor 文件:327.49 Kbytes Page:2 Pages | ISC 无锡固电 | |||
N-channel 600 V, 325 mOhm typ., 11 A FDmesh II Power MOSFET in a TO-220 package | STMICROELECTRONICS 意法半导体 | |||
13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 13NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power | UTC 友顺 | |||
N-channel 600 V, 0.320 廓, 10 A PowerFLAT??(8x8) HV MDmesh??II Power MOSFET Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitabl | STMICROELECTRONICS 意法半导体 | |||
Low gate input resistance Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab | STMICROELECTRONICS 意法半导体 | |||
N-Channel 650V (D-S) Power MOSFET 文件:1.06718 Mbytes Page:9 Pages | VBSEMI 微碧半导体 | |||
Isc N-Channel MOSFET Transistor 文件:289.83 Kbytes Page:2 Pages | ISC 无锡固电 |
STP13NM60N产品属性
- 类型
描述
- 型号
STP13NM60N
- 功能描述
MOSFET N-Ch 600 Volt 11 Amp Power MDmesh
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
2016+ |
TO220 |
11000 |
公司只做原装,假一罚十,可开17%增值税发票! |
|||
ST/意法 |
24+ |
TO-220A |
3800 |
大批量供应优势库存热卖 |
|||
ST(意法半导体) |
2024+ |
TO-220-3 |
500000 |
诚信服务,绝对原装原盘 |
|||
ST |
1829 |
TO-220 |
100 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST/意法 |
25+ |
TO-220 |
32360 |
ST/意法全新特价STP13NM60N即刻询购立享优惠#长期有货 |
|||
STM |
24+/25+ |
TO-220AB |
7850 |
原装正品现货库存价优 |
|||
ST |
11+ |
TO-220 |
135 |
只做原装正品 |
|||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ST/意法半导体 |
24+ |
Through Hole |
16900 |
原装,正品 |
|||
ST |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
STP13NM60N规格书下载地址
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