Low gate input resistance

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab

N沟道600 V、0.28 Ohm典型值、11 A MDmesh(TM) II功率MOSFET，D2PAK封装

Isc N-Channel MOSFET Transistor

文件：289.83 Kbytes Page：2 Pages

N-Channel 650 V (D-S) MOSFET

文件：1.03996 Mbytes Page：8 Pages

isc N-Channel Mosfet Transistor

文件：312.46 Kbytes Page：2 Pages

13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 13NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power

N-channel 600 V, 0.320 廓, 10 A PowerFLAT??(8x8) HV MDmesh??II Power MOSFET

Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitabl

N-Channel 650V (D-S) Power MOSFET

文件：1.06718 Mbytes Page：9 Pages