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STP13N60M2价格
参考价格:¥6.9563
型号:STP13N60M2 品牌:STMicroelectronics 备注:这里有STP13N60M2多少钱,2025年最近7天走势,今日出价,今日竞价,STP13N60M2批发/采购报价,STP13N60M2行情走势销售排行榜,STP13N60M2报价。型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
---|---|---|---|---|
STP13N60M2 | N-channel 600 V, 0.35 廓 typ., 11 A MDmesh II Plus??low Qg Power MOSFETs in TO-220, IPAK and TO-247 packages Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They | STMICROELECTRONICS 意法半导体 | ||
STP13N60M2 | N-Channel 650V (D-S) Power MOSFET 文件:1.10773 Mbytes Page:10 Pages | VBSEMI 微碧半导体 | ||
STP13N60M2 | N沟道600 V、0.35 Ohm典型值、11 A MDmesh M2功率MOSFET,TO-220封装 | STMICROELECTRONICS 意法半导体 | ||
Extremely low gate charge Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficien | STMICROELECTRONICS 意法半导体 | |||
Extremely low gate charge Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficien | STMICROELECTRONICS 意法半导体 | |||
Low gate input resistance Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They | STMICROELECTRONICS 意法半导体 | |||
Low gate input resistance Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They | STMICROELECTRONICS 意法半导体 | |||
Extremely low gate charge 文件:674.18 Kbytes Page:12 Pages | STMICROELECTRONICS 意法半导体 |
STP13N60M2产品属性
- 类型
描述
- 型号
STP13N60M2
- 制造商
STMicroelectronics
- 功能描述
POWER MOSFET - Rail/Tube
- 制造商
STMicroelectronics
- 功能描述
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220 Tube
- 制造商
STMicroelectronics
- 功能描述
MOSFET N-CH 600V 11A TO-220
- 制造商
STMicroelectronics
- 功能描述
STP13N60M2 Series N-Channel 600V 380 mOhm MDmesh II Plus Power Mosfet - TO-220-3
- 制造商
STMicroelectronics
- 功能描述
MOSFET N-Ch 600V 12A MDmesh II TO-220
- 制造商
STMicroelectronics
- 功能描述
MOSFET N-Channel 600V 12A TO-220
- 制造商
STMicroelectronics
- 功能描述
600V,0.35,11A,N-Channel Power MOSFET
- 制造商
STMicroelectronics
- 功能描述
N-channel 600V,0.35Ohm,11A MOSFET
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA |
14280 |
强势渠道订货 7-10天 |
|||
原装 |
25+ |
TO-220 |
20300 |
原装特价STP13N60M2即刻询购立享优惠#长期有货 |
|||
ST |
1647+ |
TO220 |
80 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源! |
|||
ST/意法半导体 |
21+ |
TO-220-3 |
8860 |
原装现货,实单价优 |
|||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ST |
25+23+ |
TO-220F |
37946 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
ST/意法半导体 |
21+ |
TO-220-3 |
8860 |
只做原装,质量保证 |
|||
ST/意法半导体 |
2023+ |
TO-220-3 |
6000 |
原装正品现货、支持第三方检验、终端BOM表可配单提供 |
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STP13N60M2规格书下载地址
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