N-CHANNEL 500V - 0.3W - 12A TO-220/TO-220FP/I PAK MDmesh]Power MOSFET

Description The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of

N-channel 550V @ tjmax - 0.30廓 - 12A TO-220/FP/D2/I2PAK MDmesh??Power MOSFET

文件：544.65 Kbytes Page：17 Pages

isc N-Channel MOSFET Transistor

文件：320.2 Kbytes Page：2 Pages

N沟道500V - 0.30 Ohm - 12A - TO-220 MDmesh(TM) 功率MOSFET

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 350mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL500V-0.32ohm-12ATO-220/FP/D2PAK/I2PAK/TO-247 FDmesh??Power MOSFET with FAST DIODE

Description The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. General features ■ 100 avalanche tested ■ High dv/dt a

N-CHANNEL500V-0.32ohm-12ATO-220/FP/D2PAK/I2PAK/TO-247 FDmesh??Power MOSFET with FAST DIODE

Description The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. General features ■ 100 avalanche tested ■ High dv/dt a

N-CHANNEL 500V - 0.3W - 12A TO-220/TO-220FP/I PAK MDmesh]Power MOSFET

Description The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of

N-channel 500V - 0.29廓 - 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmesh??Power MOSFET

Description This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mos

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.38Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 550V @ tjmax - 0.30廓 - 12A TO-220/FP/D2/I2PAK MDmesh??Power MOSFET

文件：544.65 Kbytes Page：17 Pages

N-channel 500V - 0.32廓 - 12A - TO-220/FP - D2/I2PAK - TO-247 FDmesh??Power MOSFET (with fast diode)

文件：466.66 Kbytes Page：18 Pages

N-channel 500V - 0.32廓 - 12A - TO-220/FP - D2/I2PAK - TO-247 FDmesh??Power MOSFET (with fast diode)

文件：466.66 Kbytes Page：18 Pages

N-channel 550V @ tjmax - 0.30廓 - 12A TO-220/FP/D2/I2PAK MDmesh??Power MOSFET

文件：544.65 Kbytes Page：17 Pages

isc N-Channel MOSFET Transistor

文件：278.13 Kbytes Page：2 Pages

N沟道500V - 0.30 Ohm - 12A - TO-220FP MDmesh(TM) 功率MOSFET

N-channel 500 V, 0.29 廓, 11 A MDmesh??II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP

文件：588.5 Kbytes Page：19 Pages

N-channel 550V @ tjmax - 0.30廓 - 12A TO-220/FP/D2/I2PAK MDmesh??Power MOSFET

文件：544.65 Kbytes Page：17 Pages

N-Channel 650 V (D-S) MOSFET

文件：1.039369 Mbytes Page：8 Pages

N-channel 500 V, 0.29 廓, 11 A MDmesh??II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP

文件：588.5 Kbytes Page：19 Pages

N-channel 550V @ tjmax - 0.30廓 - 12A TO-220/FP/D2/I2PAK MDmesh??Power MOSFET

文件：544.65 Kbytes Page：17 Pages

N-channel 500V - 0.32廓 - 12A - TO-220/FP - D2/I2PAK - TO-247 FDmesh??Power MOSFET (with fast diode)

文件：466.66 Kbytes Page：18 Pages