isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 10mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 5mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL 100V - 0.009 W - 120A D2PAK/TO-220 STripFET II POWER MOSFET

Description These devices are N-channel Power MOSFET realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize the on-resistance. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for telecom

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=110A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 10.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 100V - 0.009OHM - 110A - TO-247 - TO-220 - D2PAK STripFET2 Power MOSFET

Description These devices are N-channel Power MOSFET realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize the on-resistance. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for telecom

N-channel 100 V, 0.009 ohm, 110 A STripFET II Power MOSFET

Description These devices are N-channel Power MOSFET realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize the on-resistance. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for telecom

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 5.5mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 100 V, 8 m廓 typ., 120 A, STripFET??DeepGATE?? Power MOSFETs in D2PAK and TO-220 packages

文件：949.58 Kbytes Page：18 Pages

封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MOSFET N-CH 100V TO-220 分立半导体产品 晶体管 - FET，MOSFET - 单个

N沟道40 V、3.8 mOhm、80 A STripFET(TM) VI DeepGATE(TM) 功率MOSFET，TO-220封装

N-channel 40 V, 3.8 m廓 , 80 A, TO-220 STripFET??VI DeepGATE??Power MOSFET

文件：746.11 Kbytes Page：13 Pages

N-Channel 40 -V (D-S) MOSFET

文件：970.79 Kbytes Page：7 Pages

N-CHANNEL 40V - 0.0047ohm - 120A TO-220 STripFET II MOSFET

文件：296.9 Kbytes Page：11 Pages

N-CHANNEL 40V - 0.0047ohm - 120A TO-220 STripFET II MOSFET

N-channel 40V - 0.0047ohm - 120A TO-220 STripFET II MOSFET

文件：303.61 Kbytes Page：14 Pages

N-channel 40V - 0.0047ohm - 120A TO-220 STripFET II MOSFET

文件：303.61 Kbytes Page：14 Pages

N沟道100 V、9 mOhm典型值、110 A STripFET II功率MOSFET，TO-220封装

N-channel 30V - 0.005ohm - 60A - TO-220 / D2PAK / I2PAK STripFET Power MOSFET for DC-DC conversion

文件：508.57 Kbytes Page：17 Pages

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

Precision Wirewound Resistors

文件：318.25 Kbytes Page：2 Pages

Temperature Sensors Line Guide

文件：736.09 Kbytes Page：11 Pages

THREADED INSERT, BLIND, REGULAR HEAD STYLE LIGHT DUTY-PRESS IN

文件：106.68 Kbytes Page：1 Pages