N沟道800 V、0.65 Ohm典型值、8 A MDmesh K5功率MOSFET，TO-220封装

800V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 1.1Ω@VGS = 10 V

800V N-Channel Planar MOSFET

Features RDSON=1.0Ω @Vgs=10V, Id=5A Low gate Charge(typical 45nC) Low Crss (typical 6.3pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Halogen free and RoHS compliant Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power A d

N-Channel Power MOSFET

文件：352.08 Kbytes Page：6 Pages

10A, 800V N-CHANNEL POWER MOSFET

文件：199.64 Kbytes Page：6 Pages

isc N-Channel MOSFET Transistor

文件：296.15 Kbytes Page：2 Pages