位置：首页 > IC中文资料第4521页 > STP08IE120F4
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STP08IE120F4 | Emitter Switched Bipolar Transistor ESBT 1200 V - 8A - 0.10 ohm Description The STP08IE120F4 is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications. It is designed for use in Gate Driven based topologies. General features ■ High voltage / high current Cascode configuration ■ Low equi | STMICROELECTRONICS 意法半导体 |   | |
STP08IE120F4 | 封装/外壳：TO-220-4 整包 包装：卷带（TR） 描述：TRANS BIPO EMITTER SW TO-220FP-4 分立半导体产品 晶体管 - 特殊用途 | STMICROELECTRONICS 意法半导体 | | |
Emitter Switched Bipolar Transistor ESBT 1200 V - 8A - 0.10 ohm Description The STP08IE120F4 is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications. It is designed for use in Gate Driven based topologies. General features ■ High voltage / high current Cascode configuration ■ Low equi | STMICROELECTRONICS 意法半导体 | |
STP08IE120F4产品属性
- 类型
描述
- 型号
STP08IE120F4
- 功能描述
IGBT 晶体管 PWR BIP/S.SIGNAL
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
50 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
G-NiceRF(思为无线) |
24+ |
SMD,8.72x9mm |
8215 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
ST |
12+ |
TO-220 |
50 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
24+ |
TO-220 |
2500 |
原装现货热卖 |
|||
ST |
2016+ |
TO-220 |
6528 |
房间原装进口现货假一赔十 |
|||
ST |
23+ |
TO-220 |
8000 |
专做原装正品,假一罚百! |
|||
ST全系列 |
25+23+ |
TO-220 |
26283 |
绝对原装正品全新进口深圳现货 |
|||
ST |
17+ |
TO-220 |
6200 |
||||
LSI |
24+ |
BGA |
4897 |
绝对原装!现货热卖! |
|||
ST |
18+ |
TO-220 |
85600 |
保证进口原装可开17%增值税发票 |
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STP08IE120F4规格书下载地址
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