2kV NPN Darlington transistor

Description The STP03D200 is made by two extra high voltage NPN transistors in Darlington configuration housed in a single package. The resulting device shows high gain performance. Features ■ Extra high voltage capability ■ High gain characteristic Application ■ Active start-up network in 3

封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN DARL 1200V 0.1A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

2kV NPN达林顿晶体管

Silicon Zener-Diodes with Surge Current Specification

Features • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds Applications Medium power voltage regulators and medium power transient suppression circuits

Silicon Z-Diodes and Transient Voltage Suppressors

Features ● Glass passivated junction ● Hermetically sealed package ● Clamping time in picoseconds Applications    Medium power voltage regulators and medium power transient suppression circuits

Silicon Zener-Diodes with Surge Current Specification

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Zener Diodes with Surge Current Specification

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Zener Diodes with Surge Current Specification

文件：112.23 Kbytes Page：5 Pages