N-channel 600 V, 10.4 typ., 0.44 A SuperMESHTM Power MOSFET in a SOT-223 package

Features  100 avalanche tested  Extremely high dv/dt capability  Gate charge minimized  ESD improved capability Description This high voltage device is an N-channel Power MOSFET developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established

N沟道600 V、10 Ohm典型值、0.44 A有齐纳管保护的SuperMESH(TM) 功率MOSFET，SOT-223封装

N-CHANNEL 600V - 8-ohm - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH-TM MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser

N-CHANNEL 600V 13 OHM 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET

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12W 5V SMPS evaluation board with ICE3AR4780VJZ

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Super Fast Recovery Diode

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N-CHANNEL 600V 13 OHM 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET

文件：732.82 Kbytes Page：14 Pages