Features

 100 avalanche tested

 Extremely high dv/dt capability

 Gate charge minimized

 ESD improved capability

Description

This high voltage device is an N-channel Power

MOSFET developed using the SuperMESH™

technology by STMicroelectronics, an

optimization of the well-established

PowerMESH™. In addition to a significant

reduction in on-resistance, this device is

designed to ensure a high level of dv/dt capability

for the most demanding applications.

Applications

 Switching applications