P -Channel E nhancement Mode F ield E ffect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● Surface Mount Package.

Surface Mount P-Channel Enhancement Mode MOSFET

Features: * Super high dense cell design for low RDS(ON) RDS(ON)

P-Channel 30-V (D-S) MOSFET

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P-Channel MOSFET uses advanced trench technology

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Mosfets

P-Channel 30-V (D-S) MOSFET

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SOP-8 Plastic-Encapsulate MOSFETS

Description The 9435 uses advanced trench technology to provide excellent RDS , low gate charge and operation with gate voltages as low as 4.5V. General Features VDS = -30V RDS

P-Channel Enhancement Mode Power MOSFET

DESCRIPTION The 9435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -5.1A RDS(ON)

MACHINE SCREW PAN PHILLIPS 10-32

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20V P-Channel Increased MOS FET

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P-Channel 30-V (D-S) MOSFET

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