Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

N-Channel 30-V (D-S) MOSFET

文件：1.85935 Mbytes Page：9 Pages

Mosfets

N-Channel E nhancement Mode F ield E ffect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● Surface Mount Package.

Surface Mount N-Channel Enhancement Mode MOSFET

DRAIN CURRENT 12 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE Features: * Super high dense cell design for low RDS(ON) RDS(ON)

N-Channel MOSFET uses advanced trench technology

文件：1.20813 Mbytes Page：4 Pages

Mosfets

SOP-8 Plastic-Encapsulate MOSFETS

Description The 4884 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● High power and current handing capability ● Lead

40V Dual N-Channel MOSFET

General Description The AO4884 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This is an all purpose device that is suitable for use in a wide range of power conversion applications. Product Summary VDS 40V ID

Monolithic Crystal Filter

文件：455.93 Kbytes Page：3 Pages

N-Channel Enhancement Mode MOSFET

文件：455.86 Kbytes Page：7 Pages

Dual N-Channel MOSFET

文件：1.09893 Mbytes Page：5 Pages