N-Channel E nhancement Mode F ield E ffect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● Surface Mount Package.

Surface Mount N-Channel Enhancement Mode MOSFET

DRAIN CURRENT 12 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE Features: * Super high dense cell design for low RDS(ON) RDS(ON)

N-Channel MOSFET uses advanced trench technology

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Mosfets

Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET

General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The MOSFET features faster switching and lower gate charge than other MOSFETs with compar

TrenchMOS logic level FET

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TrenchMOS??logic level FET

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Advanced monitor video controller for OSD

文件：189 Kbytes Page：28 Pages