丝印代码：AO4884；Dual N-Channel MOSFET

Product Summary VDS 40V ID (at VGS=10V) 10A RDS(ON) (at VGS=10V)

丝印代码：AO4884；Dual N-Channel MOSFET

General Description The AO4884 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This is an all purpose device that is suitable for use in a wide range of power conversion applications.

中压MOSFET (40V - 400V)

40V Dual N-Channel MOSFET

40V Dual N-Channel MOSFET

General Description The AO4884 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This is an all purpose device that is suitable for use in a wide range of power conversion applications. Product Summary VDS 40V ID

丝印代码：4884；Dual N-Channel MOSFET

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Dual N-Channel 40-V (D-S) MOSFET

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20 V, 6 A Synchronous Step-Down

GENERAL DESCRIPTION The ADP2381 is a current mode control, synchronous, step down, dc-to-dc regulator. It integrates a 44 mΩ power MOSFET and a low-side driver to provide a high efficiency solution. The ADP2381 runs from an input voltage of 4.5 V to 20 V and can deliver 6 A of output current. T

Dual 5 A, 20 V Synchronous Step-Down

GENERAL DESCRIPTION The ADP2325 is a full featured, dual output, step-down dc-to-dc regulator based on a current mode architecture. The ADP2325 integrates two high-side power MOSFETs and two low-side drivers for the external N-channel MOSFETs. The two pulse-width modulation (PWM) channels can be

Dual 3 A, 20 V Synchronous Step-Down Regulator with Integrated High-Side MOSFET

GENERAL DESCRIPTION The ADP2323 is a full featured, dual output, step-down dc-to-dc regulator based on current-mode architecture. The ADP2323 integrates two high-side power MOSFETs and two low-side drivers for the external N-channel MOSFETs. The two pulse-width mod ulation (PWM) channels can be c

丝印代码：4884；Dual N-Channel MOSFET

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场效应管MOSFET

Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET

General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The MOSFET features faster switching and lower gate charge than other MOSFETs with compar

N-Channel E nhancement Mode F ield E ffect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● Surface Mount Package.

TrenchMOS logic level FET

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TrenchMOS??logic level FET

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Advanced monitor video controller for OSD

文件：189 Kbytes Page：28 Pages