丝印代码：90N10F7；N-channel 100 V, 7 mΩ typ., 70 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench

N-channel 100 V, 7 mΩ typ., 70 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench

丝印代码：90N3LLH6；N-channel 30 V, 0.0038 廓 typ., 24 A STripFET??VI DeepGATE?? Power MOSFET in PowerFLAT??5x6 package

Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Features • RDS(on) * Qg industry benchmark • Extremely low on-resistance

丝印代码：90N6F7；N-channel 60 V, 4.6 mΩ typ., 90 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench

N-channel 60 V, 4.6 mΩ typ., 90 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench

丝印代码：90N10F7；N-channel 100 V, 0.007 廓 typ., 70 A STripFET??F7 Power MOSFET in a PowerFLAT??5x6 package

文件：482.03 Kbytes Page：14 Pages

N沟道100 V、0.007 Ohm典型值、70 A STripFET F7功率MOSFET，PowerFLAT 5x6封装

N沟道30 V、0.004 Ohm典型值、90 A STripFET H6功率MOSFET，PowerFLAT 5x6封装

N-channel 60 V, 0.0046 廓 typ., 90 A STripFET??F7 Power MOSFET in a PowerFLAT??5x6 package

文件：373.26 Kbytes Page：13 Pages

N沟道60 V、0.0046 Ohm典型值、90 A STripFET F7功率MOSFET，PowerFLAT 5x6封装