Features

• Among the lowest RDS(on) on the market

• Excellent FoM (figure of merit)

• Low Crss/Ciss ratio for EMI immunity

• High avalanche ruggedness

Applications

• Switching applications

Description

This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced

trench gate structure that results in very low on-state resistance, while also reducing

internal capacitance and gate charge for faster and more efficient switching.