N-channel 600 V, 0.115(ohm) typ., 21 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package

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N沟道600 V、0.115 Ohm典型值、21 A MDmesh DM2功率MOSFET，PowerFLAT 8x8 HV封装

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 24A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.13Ω(Max)@VGS= 10V · Fast-recovery body diode APPLICATIONS · Switching applications

N-channel 600 V, 0.110 Ω typ., 24 A MDmesh™ DM2 Power MOSFET in TO-220FP package

Features  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100 avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Applications  Switching applications Description This high voltage N-channel Power MOSFET is part of

N-channel 600 V, 0.110 廓 typ., 24 A MDmesh??DM2 Power MOSFET in D짼PAK, TO-220 and TO-247 packages

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N-channel 600 V, 0.110 廓 typ., 24 A MDmesh??DM2 Power MOSFET in D짼PAK, TO-220 and TO-247 packages

文件：1.11737 Mbytes Page：20 Pages