N‑channel enhancement mode standard level 100 V, 4.6 mΩ max., 125 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package

Features • MSL1 grade • 175 °C operating temperature • 100 avalanche tested Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure. It ensures very low on-state resistance while reducing

N-channel 20 V, 0.002, 28 A STripFET V Power MOSFET in PowerFLAT 5x6 package

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N-channel 20 V, 0.002, 28 A STripFET V Power MOSFET in PowerFLAT 5x6 package

汽车级N沟道40 V、2.9 mOhm典型值、55 A STripFET F6功率MOSFET，PowerFLAT 5x6封装

Wettable flank package

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High avalanche ruggedness

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Automotive-grade N-channel 40 V, 3.0 mOhm typ., 55 A STripFET F6 in a PowerFLAT 5x6 package

High avalanche ruggedness

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N-channel 20V - 0.0025ohm - 120A - PowerFLAT(6x5) STripFETIII Power MOSFET

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Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

THREADED INSERT, BLIND, REGULAR HEAD STYLE LIGHT DUTY-PRESS IN

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Precision Wirewound Resistors

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Temperature Sensors Line Guide

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